Abstract
In physically small and/or high frequency metal-oxide-semiconductor devices the carriers are confined to regions sufficiently close to the interface for their motion to become quasi-two-dimensional in nature, even at room temperature. In this case the transport of carriers in the inversion or accumulation layers is much more susceptible to surface and/or interface properties. In this paper the transport of electrons (or holes) in quantized quasi-two-dimensional layers is discussed for III-V semiconductors, and the various scattering mechanisms are detailed.
Original language | English (US) |
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Pages (from-to) | 243-252 |
Number of pages | 10 |
Journal | Thin Solid Films |
Volume | 56 |
Issue number | 1-2 |
DOIs | |
State | Published - Jan 1979 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry