The transport of electrons in quantized inversion and accumulation layers in III-V compounds

D. K. Ferry

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

In physically small and/or high frequency metal-oxide-semiconductor devices the carriers are confined to regions sufficiently close to the interface for their motion to become quasi-two-dimensional in nature, even at room temperature. In this case the transport of carriers in the inversion or accumulation layers is much more susceptible to surface and/or interface properties. In this paper the transport of electrons (or holes) in quantized quasi-two-dimensional layers is discussed for III-V semiconductors, and the various scattering mechanisms are detailed.

Original languageEnglish (US)
Pages (from-to)243-252
Number of pages10
JournalThin Solid Films
Volume56
Issue number1-2
DOIs
StatePublished - Jan 1979

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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