The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

S. V. Novikov, A. J. Winser, A. Bell, I. Harrison, T. Li, R. P. Campion, C. R. Staddon, C. S. Davis, Fernando Ponce, C. T. Foxon

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We have studied the transition from As-doped GaN showing strong blue emission (∼ 2.6 eV) at room temperature to the formation of GaN1-xAsx alloys for films grown by plasma-assisted molecular beam epitaxy. We have demonstrated that with increasing N-to-Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN1-xAsx alloy films. We present a model based on thermodynamic considerations, which can explain how this might occur.

Original languageEnglish (US)
Pages (from-to)423-430
Number of pages8
JournalJournal of Crystal Growth
Volume240
Issue number3-4
DOIs
StatePublished - May 1 2002

Keywords

  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Novikov, S. V., Winser, A. J., Bell, A., Harrison, I., Li, T., Campion, R. P., Staddon, C. R., Davis, C. S., Ponce, F., & Foxon, C. T. (2002). The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy. Journal of Crystal Growth, 240(3-4), 423-430. https://doi.org/10.1016/S0022-0248(02)01079-5