The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

S. V. Novikov; A. J. Winser; A. Bell; I. Harrison; T. Li; R. P. Campion; C. R. Staddon; C. S. Davis; Fernando Ponce; C. T. Foxon

doi:10.1016/S0022-0248(02)01079-5

The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

S. V. Novikov, A. J. Winser, A. Bell, I. Harrison, T. Li, R. P. Campion, C. R. Staddon, C. S. Davis, Fernando Ponce, C. T. Foxon

Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We have studied the transition from As-doped GaN showing strong blue emission (∼ 2.6 eV) at room temperature to the formation of GaN_1-xAs_x alloys for films grown by plasma-assisted molecular beam epitaxy. We have demonstrated that with increasing N-to-Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN_1-xAs_x alloy films. We present a model based on thermodynamic considerations, which can explain how this might occur.

Original language	English (US)
Pages (from-to)	423-430
Number of pages	8
Journal	Journal of Crystal Growth
Volume	240
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(02)01079-5
State	Published - May 2002

Keywords

A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(02)01079-5

Cite this

@article{e90174fbe7974c56a8d6888cb68fbca3,

title = "The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy",

abstract = "We have studied the transition from As-doped GaN showing strong blue emission (∼ 2.6 eV) at room temperature to the formation of GaN1-xAsx alloys for films grown by plasma-assisted molecular beam epitaxy. We have demonstrated that with increasing N-to-Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN1-xAsx alloy films. We present a model based on thermodynamic considerations, which can explain how this might occur.",

keywords = "A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Novikov, {S. V.} and Winser, {A. J.} and A. Bell and I. Harrison and T. Li and Campion, {R. P.} and Staddon, {C. R.} and Davis, {C. S.} and Fernando Ponce and Foxon, {C. T.}",

note = "Funding Information: This work was undertaken with support from EPSRC (GR/M67438 and GR/R46465) and two of us, AJW and CSD, would like to thank EPSRC for their studentships. The authors would also like to thank Rick Hervig and Klaus Franzreb for the SIMS studies at ASU.",

year = "2002",

month = may,

doi = "10.1016/S0022-0248(02)01079-5",

language = "English (US)",

volume = "240",

pages = "423--430",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

AU - Novikov, S. V.

AU - Winser, A. J.

AU - Bell, A.

AU - Harrison, I.

AU - Li, T.

AU - Campion, R. P.

AU - Staddon, C. R.

AU - Davis, C. S.

AU - Ponce, Fernando

AU - Foxon, C. T.

N1 - Funding Information: This work was undertaken with support from EPSRC (GR/M67438 and GR/R46465) and two of us, AJW and CSD, would like to thank EPSRC for their studentships. The authors would also like to thank Rick Hervig and Klaus Franzreb for the SIMS studies at ASU.

PY - 2002/5

Y1 - 2002/5

N2 - We have studied the transition from As-doped GaN showing strong blue emission (∼ 2.6 eV) at room temperature to the formation of GaN1-xAsx alloys for films grown by plasma-assisted molecular beam epitaxy. We have demonstrated that with increasing N-to-Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN1-xAsx alloy films. We present a model based on thermodynamic considerations, which can explain how this might occur.

AB - We have studied the transition from As-doped GaN showing strong blue emission (∼ 2.6 eV) at room temperature to the formation of GaN1-xAsx alloys for films grown by plasma-assisted molecular beam epitaxy. We have demonstrated that with increasing N-to-Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN1-xAsx alloy films. We present a model based on thermodynamic considerations, which can explain how this might occur.

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=0036571224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036571224&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)01079-5

DO - 10.1016/S0022-0248(02)01079-5

M3 - Article

AN - SCOPUS:0036571224

SN - 0022-0248

VL - 240

SP - 423

EP - 430

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this