The threshold characteristics of chalcogenide-glass memory switches

A. E. Owen, J. M. Robertson, C. Main

Research output: Contribution to journalArticle

43 Scopus citations

Abstract

A detailed study is reported of the threshold characteristics of memory switches made from a chalcogenide glass of composition Ge15Te81S2Sb2. Most of the devices were fabricated by microelectronic processing techniques compatible with integrated-circuit technology. The main experimental feature is the systematic variation of the factors which influence the thermal parameters of the devices, i.e. temperature, geometry (thickness and radius of the active region of the switch) and substrate material. Measurements are also reported of the temperature and field dependence of the isothermal conductivity of the chalcogenide glass. Analysis shows that the results can be described adequately by an electrothermal model which takes into account the full field dependence of the isothermal conductivity and of the thermal fringing in the substrate.

Original languageEnglish (US)
Pages (from-to)29-52
Number of pages24
JournalJournal of Non-Crystalline Solids
Volume32
Issue number1-3
DOIs
StatePublished - Jan 1 1979

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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