The threshold characteristics of chalcogenide-glass memory switches

A. E. Owen, J. M. Robertson, C. Main

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

A detailed study is reported of the threshold characteristics of memory switches made from a chalcogenide glass of composition Ge15Te81S2Sb2. Most of the devices were fabricated by microelectronic processing techniques compatible with integrated-circuit technology. The main experimental feature is the systematic variation of the factors which influence the thermal parameters of the devices, i.e. temperature, geometry (thickness and radius of the active region of the switch) and substrate material. Measurements are also reported of the temperature and field dependence of the isothermal conductivity of the chalcogenide glass. Analysis shows that the results can be described adequately by an electrothermal model which takes into account the full field dependence of the isothermal conductivity and of the thermal fringing in the substrate.

Original languageEnglish (US)
Pages (from-to)29-52
Number of pages24
JournalJournal of Non-Crystalline Solids
Volume32
Issue number1-3
DOIs
StatePublished - 1979
Externally publishedYes

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Microelectronic processing
switches
Switches
Data storage equipment
Glass
conductivity
thresholds
glass
Substrates
microelectronics
integrated circuits
Integrated circuits
temperature distribution
Temperature
temperature dependence
radii
Geometry
geometry
Chemical analysis
temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

The threshold characteristics of chalcogenide-glass memory switches. / Owen, A. E.; Robertson, J. M.; Main, C.

In: Journal of Non-Crystalline Solids, Vol. 32, No. 1-3, 1979, p. 29-52.

Research output: Contribution to journalArticle

Owen, A. E. ; Robertson, J. M. ; Main, C. / The threshold characteristics of chalcogenide-glass memory switches. In: Journal of Non-Crystalline Solids. 1979 ; Vol. 32, No. 1-3. pp. 29-52.
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