The structure of rapidly thermally annealed nitrogen-implanted silicon

Z. Liliental; Ray Carpenter; J. C. Kelly

doi:10.1016/0040-6090(86)90224-5

The structure of rapidly thermally annealed nitrogen-implanted silicon

Z. Liliental, Ray Carpenter, J. C. Kelly

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3 Scopus citations

Abstract

The structure and composition of nitrogen-implanted silicon (to a low dose of 2 × 10¹⁷ cm^-2) were studied. The implantation produced an amorphized silicon layer containing nitrogen, followed by a crystalline silicon layer with a high density of {113} defects and faulted loops on {111} planes. Rapid thermal annealing (heat pulse) at 900 and 1000°C for 20s removed the metastable {113} defects, increased the density of {111} defects and resulted in a redistribution of nitrogen in the polycrystalline silicon formed from the amorphous silicon layers.

Original language	English (US)
Pages (from-to)	141-150
Number of pages	10
Journal	Thin Solid Films
Volume	138
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(86)90224-5
State	Published - Apr 1 1986

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(86)90224-5

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AU - Kelly, J. C.

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N2 - The structure and composition of nitrogen-implanted silicon (to a low dose of 2 × 1017 cm-2) were studied. The implantation produced an amorphized silicon layer containing nitrogen, followed by a crystalline silicon layer with a high density of {113} defects and faulted loops on {111} planes. Rapid thermal annealing (heat pulse) at 900 and 1000°C for 20s removed the metastable {113} defects, increased the density of {111} defects and resulted in a redistribution of nitrogen in the polycrystalline silicon formed from the amorphous silicon layers.

AB - The structure and composition of nitrogen-implanted silicon (to a low dose of 2 × 1017 cm-2) were studied. The implantation produced an amorphized silicon layer containing nitrogen, followed by a crystalline silicon layer with a high density of {113} defects and faulted loops on {111} planes. Rapid thermal annealing (heat pulse) at 900 and 1000°C for 20s removed the metastable {113} defects, increased the density of {111} defects and resulted in a redistribution of nitrogen in the polycrystalline silicon formed from the amorphous silicon layers.

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The structure of rapidly thermally annealed nitrogen-implanted silicon

Abstract

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