The structure of rapidly thermally annealed nitrogen-implanted silicon

Z. Liliental, Ray Carpenter, J. C. Kelly

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The structure and composition of nitrogen-implanted silicon (to a low dose of 2 × 1017 cm-2) were studied. The implantation produced an amorphized silicon layer containing nitrogen, followed by a crystalline silicon layer with a high density of {113} defects and faulted loops on {111} planes. Rapid thermal annealing (heat pulse) at 900 and 1000°C for 20s removed the metastable {113} defects, increased the density of {111} defects and resulted in a redistribution of nitrogen in the polycrystalline silicon formed from the amorphous silicon layers.

Original languageEnglish (US)
Pages (from-to)141-150
Number of pages10
JournalThin Solid Films
Volume138
Issue number1
DOIs
StatePublished - Apr 1 1986

Fingerprint

Silicon
Nitrogen
nitrogen
Defects
silicon
defects
Rapid thermal annealing
Amorphous silicon
Polysilicon
Crystalline materials
amorphous silicon
implantation
Chemical analysis
heat
dosage
annealing
pulses

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

The structure of rapidly thermally annealed nitrogen-implanted silicon. / Liliental, Z.; Carpenter, Ray; Kelly, J. C.

In: Thin Solid Films, Vol. 138, No. 1, 01.04.1986, p. 141-150.

Research output: Contribution to journalArticle

Liliental, Z. ; Carpenter, Ray ; Kelly, J. C. / The structure of rapidly thermally annealed nitrogen-implanted silicon. In: Thin Solid Films. 1986 ; Vol. 138, No. 1. pp. 141-150.
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