The structure of rapidly thermally annealed nitrogen-implanted silicon

Z. Liliental, Ray Carpenter, J. C. Kelly

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The structure and composition of nitrogen-implanted silicon (to a low dose of 2 × 1017 cm-2) were studied. The implantation produced an amorphized silicon layer containing nitrogen, followed by a crystalline silicon layer with a high density of {113} defects and faulted loops on {111} planes. Rapid thermal annealing (heat pulse) at 900 and 1000°C for 20s removed the metastable {113} defects, increased the density of {111} defects and resulted in a redistribution of nitrogen in the polycrystalline silicon formed from the amorphous silicon layers.

Original languageEnglish (US)
Pages (from-to)141-150
Number of pages10
JournalThin Solid Films
Volume138
Issue number1
DOIs
StatePublished - Apr 1 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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