The structure of ion-implanted amorphous silicon

J. M. Gibson; J. Y. Cheng; P. Voyles; Michael Treacy; D. C. Jacobson

The structure of ion-implanted amorphous silicon

J. M. Gibson, J. Y. Cheng, P. Voyles, Michael Treacy, D. C. Jacobson

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Using fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	27-30
Number of pages	4
Volume	540
State	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "The structure of ion-implanted amorphous silicon",

abstract = "Using fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.",

author = "Gibson, {J. M.} and Cheng, {J. Y.} and P. Voyles and Michael Treacy and Jacobson, {D. C.}",

year = "1999",

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T1 - The structure of ion-implanted amorphous silicon

AU - Gibson, J. M.

AU - Cheng, J. Y.

AU - Voyles, P.

AU - Treacy, Michael

AU - Jacobson, D. C.

PY - 1999

Y1 - 1999

N2 - Using fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

AB - Using fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

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M3 - Chapter

AN - SCOPUS:0032592245

VL - 540

SP - 27

EP - 30

BT - Materials Research Society Symposium - Proceedings

ER -

The structure of ion-implanted amorphous silicon

Abstract

ASJC Scopus subject areas

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