The structure of ion-implanted amorphous silicon

J. M. Gibson, J. Y. Cheng, P. Voyles, Michael Treacy, D. C. Jacobson

Research output: Chapter in Book/Report/Conference proceedingChapter

8 Scopus citations

Abstract

Using fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages27-30
Number of pages4
Volume540
StatePublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Gibson, J. M., Cheng, J. Y., Voyles, P., Treacy, M., & Jacobson, D. C. (1999). The structure of ion-implanted amorphous silicon. In Materials Research Society Symposium - Proceedings (Vol. 540, pp. 27-30)