Engineering & Materials Science
Nanocrystalline silicon
100%
Amorphous silicon
73%
Ball milling
70%
Amorphization
58%
Crystallites
25%
Crystallization
19%
High resolution electron microscopy
15%
Powders
14%
Infrared absorption
14%
Polycrystalline materials
13%
Absorption spectroscopy
13%
Raman scattering
12%
Stacking faults
12%
Defects
12%
Ion implantation
12%
Infrared spectroscopy
12%
Chemical vapor deposition
10%
Differential scanning calorimetry
10%
Heating rate
9%
Diffraction
9%
Activation energy
9%
X rays
8%
Volume fraction
8%
Oxygen
7%
Scanning electron microscopy
7%
Temperature
3%
Chemical Compounds
Ball Milling
55%
Amorphization
44%
Amorphous Material
37%
Polycrystalline Solid
23%
Chemical Element
13%
Stacking Fault
12%
Amorphous Silicon
12%
Infrared Absorption Spectroscopy
11%
Ion Implantation
10%
Crystallization Point
9%
Grain Size
8%
Chemical Vapour Deposition
8%
Crystallite
7%
Differential Scanning Calorimetry
6%
Crystallization
6%
Reaction Activation Energy
6%
Chemical Transformation
5%
Scanning Electron Microscopy
5%
Volume
5%
Dioxygen
4%
Energy
4%
Surface
2%
Physics & Astronomy
balls
48%
silicon
28%
crystallites
18%
crystallization
16%
defects
11%
infrared absorption
10%
crystal defects
10%
absorption spectroscopy
9%
amorphous silicon
9%
ion implantation
9%
infrared spectroscopy
9%
heat measurement
9%
x ray diffraction
9%
electron microscopy
9%
Raman spectra
8%
vapor deposition
8%
grain size
8%
activation energy
7%
scanning electron microscopy
6%
heating
6%
scanning
6%
high resolution
6%
oxygen
6%
temperature
3%
energy
3%