Abstract

This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages191-196
Number of pages6
Volume50
Edition8
DOIs
StatePublished - 2012
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
Duration: Oct 8 2012Oct 10 2012

Other

Other11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
CountryUnited States
CityHonolulu, HI
Period10/8/1210/10/12

Fingerprint

Thin film transistors
Zinc oxide
Gamma rays
Indium
Irradiation
Oxides
Interface states
Electron mobility
Threshold voltage
Dosimetry
Electric properties
Radiation
Degradation
Electrons
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation. / Alford, Terry; Indluru, A.; Vemuri, Rajitha N P; Holbert, Keith.

ECS Transactions. Vol. 50 8. ed. 2012. p. 191-196.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alford, T, Indluru, A, Vemuri, RNP & Holbert, K 2012, The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation. in ECS Transactions. 8 edn, vol. 50, pp. 191-196, 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012, Honolulu, HI, United States, 10/8/12. https://doi.org/10.1149/05008.0191ecst
Alford, Terry ; Indluru, A. ; Vemuri, Rajitha N P ; Holbert, Keith. / The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation. ECS Transactions. Vol. 50 8. ed. 2012. pp. 191-196
@inproceedings{dc43065b765b4378b4aca2855af26ab6,
title = "The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation",
abstract = "This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.",
author = "Terry Alford and A. Indluru and Vemuri, {Rajitha N P} and Keith Holbert",
year = "2012",
doi = "10.1149/05008.0191ecst",
language = "English (US)",
isbn = "9781607683568",
volume = "50",
pages = "191--196",
booktitle = "ECS Transactions",
edition = "8",

}

TY - GEN

T1 - The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation

AU - Alford, Terry

AU - Indluru, A.

AU - Vemuri, Rajitha N P

AU - Holbert, Keith

PY - 2012

Y1 - 2012

N2 - This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.

AB - This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84885755093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885755093&partnerID=8YFLogxK

U2 - 10.1149/05008.0191ecst

DO - 10.1149/05008.0191ecst

M3 - Conference contribution

SN - 9781607683568

VL - 50

SP - 191

EP - 196

BT - ECS Transactions

ER -