Abstract
This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.
| Original language | English (US) |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 191-196 |
| Number of pages | 6 |
| Volume | 50 |
| Edition | 8 |
| DOIs | |
| State | Published - 2012 |
| Event | 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States Duration: Oct 8 2012 → Oct 10 2012 |
Other
| Other | 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 10/8/12 → 10/10/12 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation. / Alford, Terry; Indluru, A.; Vemuri, Rajitha N P; Holbert, Keith.
ECS Transactions. Vol. 50 8. ed. 2012. p. 191-196.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation
AU - Alford, Terry
AU - Indluru, A.
AU - Vemuri, Rajitha N P
AU - Holbert, Keith
PY - 2012
Y1 - 2012
N2 - This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.
AB - This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.
UR - http://www.scopus.com/inward/record.url?scp=84885755093&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885755093&partnerID=8YFLogxK
U2 - 10.1149/05008.0191ecst
DO - 10.1149/05008.0191ecst
M3 - Conference contribution
SN - 9781607683568
VL - 50
SP - 191
EP - 196
BT - ECS Transactions
ER -