This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.