Abstract

This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.

Original languageEnglish (US)
Title of host publicationThin Film Transistors 11, TFT 2012
Pages191-196
Number of pages6
Edition8
DOIs
StatePublished - Dec 1 2012
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
Duration: Oct 8 2012Oct 10 2012

Publication series

NameECS Transactions
Number8
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
CountryUnited States
CityHonolulu, HI
Period10/8/1210/10/12

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Alford, T., Indluru, A., Vemuri, R. N. P., & Holbert, K. (2012). The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation. In Thin Film Transistors 11, TFT 2012 (8 ed., pp. 191-196). (ECS Transactions; Vol. 50, No. 8). https://doi.org/10.1149/05008.0191ecst