The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation

Terry Alford; A. Indluru; Rajitha N P Vemuri; Keith Holbert

doi:10.1149/05008.0191ecst

The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation

Terry Alford, A. Indluru, Rajitha N P Vemuri, Keith Holbert

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm²/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.

Original language	English (US)
Title of host publication	Thin Film Transistors 11, TFT 2012
Pages	191-196
Number of pages	6
Edition	8
DOIs	https://doi.org/10.1149/05008.0191ecst
State	Published - Dec 1 2012
Event	11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States Duration: Oct 8 2012 → Oct 10 2012

Publication series

Name	ECS Transactions
Number	8
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
Country	United States
City	Honolulu, HI
Period	10/8/12 → 10/10/12

Fingerprint

ASJC Scopus subject areas

Engineering(all)

Cite this

Alford, T., Indluru, A., Vemuri, R. N. P., & Holbert, K. (2012). The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation. In Thin Film Transistors 11, TFT 2012 (8 ed., pp. 191-196). (ECS Transactions; Vol. 50, No. 8). https://doi.org/10.1149/05008.0191ecst

Alford, T, Indluru, A, Vemuri, RNP & Holbert, K 2012, The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation. in Thin Film Transistors 11, TFT 2012. 8 edn, ECS Transactions, no. 8, vol. 50, pp. 191-196, 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012, Honolulu, HI, United States, 10/8/12. https://doi.org/10.1149/05008.0191ecst

@inproceedings{dc43065b765b4378b4aca2855af26ab6,

title = "The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation",

abstract = "This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.",

author = "Terry Alford and A. Indluru and Vemuri, {Rajitha N P} and Keith Holbert",

year = "2012",

month = dec

day = "1",

doi = "10.1149/05008.0191ecst",

language = "English (US)",

isbn = "9781607683568",

series = "ECS Transactions",

number = "8",

pages = "191--196",

booktitle = "Thin Film Transistors 11, TFT 2012",

edition = "8",

note = "11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 ; Conference date: 08-10-2012 Through 10-10-2012",

}

TY - GEN

T1 - The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation

AU - Alford, Terry

AU - Indluru, A.

AU - Vemuri, Rajitha N P

AU - Holbert, Keith

PY - 2012/12/1

Y1 - 2012/12/1

N2 - This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.

AB - This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84885755093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885755093&partnerID=8YFLogxK

U2 - 10.1149/05008.0191ecst

DO - 10.1149/05008.0191ecst

M3 - Conference contribution

AN - SCOPUS:84885755093

SN - 9781607683568

T3 - ECS Transactions

SP - 191

EP - 196

BT - Thin Film Transistors 11, TFT 2012

T2 - 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012

Y2 - 8 October 2012 through 10 October 2012

ER -

Access to Document

10.1149/05008.0191ecst