The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator

J. Oiler, X. Qiu, J. Zhu, R. Tang, S. J. Chen, H. Huang, Keith Holbert, Hugh Barnaby, H. Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

This paper describes the new design and material selection used to improve the sensitivity of ionizing radiation sensing with a zinc oxide based Film Bulk Acoustic-Wave Resonator (FBAR). Prior results [1] demonstrated that the parallel resonant frequency of the FBAR decreased after irradiation due to radiation-induced charge trapping in the SiN. Here, by employing Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride (SiN) within a two layer SiN configuration, we were able to increase the sensitivity by over two orders of magnitude. The maximum sensitivity of 2300 kHz/krad was demonstrated and is the highest radiation sensitivity of resonant sensors known to the authors.

Original languageEnglish (US)
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages2058-2061
Number of pages4
DOIs
StatePublished - Sep 1 2011
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: Jun 5 2011Jun 9 2011

Publication series

Name2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Other

Other2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
CountryChina
CityBeijing
Period6/5/116/9/11

Keywords

  • FBAR
  • dosimeter
  • ionizing radiation
  • resonator

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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