The Sensitive Region of Displacement Damage in LPNP Induced by Various Charged Particles

Xingji Li, Jianqun Yang, Hugh J. Barnaby, Pengwei Li, Xiangsong Sun, Lei Dong, Kenneth F. Galloway, R. D. Schrimpf, D. M. Fleetwood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the sensitive region of displacement damage in LPNP induced by 10 MeV Si ions, 40 MeV Si ions and 3 MeV protons is investigated. Electrical parameters are measured in-situ using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation-induced defects caused by various ions are characterized by deep level transient spectroscopy (DLTS). Experimental results show that with irradiation fluence of various particles increases, the excess base current increases and the ideality factor does not change and is close to 2. The change in the reciprocal of current gain of LPNP transistors caused by the three types of particles can be normalized in one line when Si/SiO2 interface rather than base region is considered as the sensitive region of the displacement damage. DLTS results show radiation defects in LPNP transistors caused by the three types of particles are main interface traps, determining that the Si/SiO2 interface becomes a radiation sensitive region of the LPNP devices.

Original languageEnglish (US)
Title of host publication2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728156996
DOIs
StatePublished - 2019
Externally publishedYes
Event19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019 - Montpellier, France
Duration: Sep 16 2019Sep 20 2019

Publication series

Name2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019

Conference

Conference19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
Country/TerritoryFrance
CityMontpellier
Period9/16/199/20/19

Keywords

  • bipolar junction transistors
  • deep level transient spectroscopy
  • displacement defects
  • heavy ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Radiation

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