TY - GEN
T1 - The schottky junction transistor - A contender for ultralow-power radiation-tolerant space electronics
AU - Spann, J. Y.
AU - Jaconelli, P.
AU - Wu, Z.
AU - Thornton, Trevor
AU - Kemp, William T.
AU - Sampson, Steven J.
PY - 2003
Y1 - 2003
N2 - This paper is concerned with a new sub-threshold device configuration, the Schottky Junction Transistor (SJT). Results from measurements and numerical simulations of SJTs with gate lengths in the range 2 to 0.3 pm are presented. Detailed measurements of the d.c. characteristics of a 2 pm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length, L, device will have a cut-off frequency 5-6 times higher that that of an equivalent metal oxide semiconductor field effect transistor (MOSFET) carrying the same current. When projected to gate lengths of 0.1 p, cut-off fi-equencies in excess of 10 GHz are predicted. Prototype devices made at ASU perform as expected from numerical simulations. The same devices have now been exposed to 50 keV x-rays at total doses up to 200 had. The paper will present an overview of the SJT and describe the recent total dose exposure measurements.
AB - This paper is concerned with a new sub-threshold device configuration, the Schottky Junction Transistor (SJT). Results from measurements and numerical simulations of SJTs with gate lengths in the range 2 to 0.3 pm are presented. Detailed measurements of the d.c. characteristics of a 2 pm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length, L, device will have a cut-off frequency 5-6 times higher that that of an equivalent metal oxide semiconductor field effect transistor (MOSFET) carrying the same current. When projected to gate lengths of 0.1 p, cut-off fi-equencies in excess of 10 GHz are predicted. Prototype devices made at ASU perform as expected from numerical simulations. The same devices have now been exposed to 50 keV x-rays at total doses up to 200 had. The paper will present an overview of the SJT and describe the recent total dose exposure measurements.
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U2 - 10.1109/AERO.2003.1235169
DO - 10.1109/AERO.2003.1235169
M3 - Conference contribution
AN - SCOPUS:84879351856
SN - 078037651X
SN - 9780780376519
T3 - IEEE Aerospace Conference Proceedings
SP - 2447
EP - 2453
BT - 2003 IEEE Aerospace Conference, Proceedings
T2 - 2003 IEEE Aerospace Conference
Y2 - 8 March 2003 through 15 March 2003
ER -