The schottky junction transistor - A contender for ultralow-power radiation-tolerant space electronics

J. Y. Spann, P. Jaconelli, Z. Wu, Trevor Thornton, William T. Kemp, Steven J. Sampson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper is concerned with a new sub-threshold device configuration, the Schottky Junction Transistor (SJT). Results from measurements and numerical simulations of SJTs with gate lengths in the range 2 to 0.3 pm are presented. Detailed measurements of the d.c. characteristics of a 2 pm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length, L, device will have a cut-off frequency 5-6 times higher that that of an equivalent metal oxide semiconductor field effect transistor (MOSFET) carrying the same current. When projected to gate lengths of 0.1 p, cut-off fi-equencies in excess of 10 GHz are predicted. Prototype devices made at ASU perform as expected from numerical simulations. The same devices have now been exposed to 50 keV x-rays at total doses up to 200 had. The paper will present an overview of the SJT and describe the recent total dose exposure measurements.

Original languageEnglish (US)
Title of host publicationIEEE Aerospace Conference Proceedings
Pages2447-2453
Number of pages7
Volume5
DOIs
StatePublished - 2003
Event2003 IEEE Aerospace Conference - Big Sky, MT, United States
Duration: Mar 8 2003Mar 15 2003

Other

Other2003 IEEE Aerospace Conference
CountryUnited States
CityBig Sky, MT
Period3/8/033/15/03

Fingerprint

junction transistors
extraterrestrial radiation
Transistors
Electronic equipment
Radiation
electronics
simulation
Computer simulation
cut-off
Cutoff frequency
Transconductance
MOSFET devices
dosage
Dosimetry
transconductance
Capacitance
metal oxide semiconductors
X rays
field effect transistors
capacitance

ASJC Scopus subject areas

  • Aerospace Engineering
  • Space and Planetary Science

Cite this

Spann, J. Y., Jaconelli, P., Wu, Z., Thornton, T., Kemp, W. T., & Sampson, S. J. (2003). The schottky junction transistor - A contender for ultralow-power radiation-tolerant space electronics. In IEEE Aerospace Conference Proceedings (Vol. 5, pp. 2447-2453). [1235169] https://doi.org/10.1109/AERO.2003.1235169

The schottky junction transistor - A contender for ultralow-power radiation-tolerant space electronics. / Spann, J. Y.; Jaconelli, P.; Wu, Z.; Thornton, Trevor; Kemp, William T.; Sampson, Steven J.

IEEE Aerospace Conference Proceedings. Vol. 5 2003. p. 2447-2453 1235169.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spann, JY, Jaconelli, P, Wu, Z, Thornton, T, Kemp, WT & Sampson, SJ 2003, The schottky junction transistor - A contender for ultralow-power radiation-tolerant space electronics. in IEEE Aerospace Conference Proceedings. vol. 5, 1235169, pp. 2447-2453, 2003 IEEE Aerospace Conference, Big Sky, MT, United States, 3/8/03. https://doi.org/10.1109/AERO.2003.1235169
Spann JY, Jaconelli P, Wu Z, Thornton T, Kemp WT, Sampson SJ. The schottky junction transistor - A contender for ultralow-power radiation-tolerant space electronics. In IEEE Aerospace Conference Proceedings. Vol. 5. 2003. p. 2447-2453. 1235169 https://doi.org/10.1109/AERO.2003.1235169
Spann, J. Y. ; Jaconelli, P. ; Wu, Z. ; Thornton, Trevor ; Kemp, William T. ; Sampson, Steven J. / The schottky junction transistor - A contender for ultralow-power radiation-tolerant space electronics. IEEE Aerospace Conference Proceedings. Vol. 5 2003. pp. 2447-2453
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