Abstract

We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for VG = V D = 1.0 V in a structure in which the metal gates are far away from the channel. The overall small current degradation is attributed to the significant velocity overshoot effect in these structures. The lattice temperature profile shows moderate temperature rise and velocity of the carriers is slightly deteriorated due to self-heating effects when compared to isothermal simulations.

Original languageEnglish (US)
Pages (from-to)180-186
Number of pages7
JournalJournal of Computational Electronics
Volume8
Issue number3-4
StatePublished - Dec 2009

Fingerprint

Nanowires
Heating
Transistors
nanowires
transistors
Contact
Degradation
heating
Silicon
Oxides
degradation
Silicon Nanowires
wrap
Overshoot
Metals
Temperature Profile
temperature profiles
Temperature
oxides
silicon

Keywords

  • Analytic bands MC device modeling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Modeling and Simulation

Cite this

The role of the source and drain contacts on self-heating effect in nanowire transistors. / Vasileska, Dragica; Hossain, A.; Raleva, K.; Goodnick, Stephen.

In: Journal of Computational Electronics, Vol. 8, No. 3-4, 12.2009, p. 180-186.

Research output: Contribution to journalArticle

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