Abstract

We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for VG=V D=1.0 V in a structure in which the metal gates are far away from the channel. The overall small current degradation is attributed to the significant velocity overshoot effect in these structures. The lattice temperature profile shows moderate temperature rise and velocity of the carriers is slightly deteriorated due to self-heating effects when compared to isothermal simulations.

Original languageEnglish (US)
Title of host publicationMicroelectronics Technology and Devices, SBMicro 2010
Pages83-90
Number of pages8
Edition1
DOIs
StatePublished - Dec 1 2010
Event25th Symposium on Microelectronics Technology and Devices, SBMicro2010 - Sao Paulo, Brazil
Duration: Sep 6 2010Sep 9 2010

Publication series

NameECS Transactions
Number1
Volume31
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other25th Symposium on Microelectronics Technology and Devices, SBMicro2010
CountryBrazil
CitySao Paulo
Period9/6/109/9/10

ASJC Scopus subject areas

  • Engineering(all)

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