Abstract
The use of femtosecond laser pulses to excite electron-hole plasmas in semiconductors has become a major method of studying fast processes in this system in recent years. Transition times from the central Gamma valley in GaAs to the satellite X and L valleys are comparable to the reciprocal of the frequency of the phonon involved in these transitions, bringing into question the use of standard perturbation theory approaches. The authors present an initial investigation of the role of retardation arising from the finite collision duration required for such a transition to occur, through the use of a path-integral form of the quantum kinetic equation. A secondary self-scattering process and a probability of completed collisions are used to cast this equation in a semi-classical form.
| Original language | English (US) |
|---|---|
| Article number | 036 |
| Journal | Semiconductor Science and Technology |
| Volume | 7 |
| Issue number | 3 B |
| DOIs | |
| State | Published - 1992 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
The role of the finite collision duration in femtosecond laser studies of semiconductors. / Hida, H.; Yamaguchi, S.; Kriman, A. M.; Ferry, D. K.
In: Semiconductor Science and Technology, Vol. 7, No. 3 B, 036, 1992.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The role of the finite collision duration in femtosecond laser studies of semiconductors
AU - Hida, H.
AU - Yamaguchi, S.
AU - Kriman, A. M.
AU - Ferry, D. K.
PY - 1992
Y1 - 1992
N2 - The use of femtosecond laser pulses to excite electron-hole plasmas in semiconductors has become a major method of studying fast processes in this system in recent years. Transition times from the central Gamma valley in GaAs to the satellite X and L valleys are comparable to the reciprocal of the frequency of the phonon involved in these transitions, bringing into question the use of standard perturbation theory approaches. The authors present an initial investigation of the role of retardation arising from the finite collision duration required for such a transition to occur, through the use of a path-integral form of the quantum kinetic equation. A secondary self-scattering process and a probability of completed collisions are used to cast this equation in a semi-classical form.
AB - The use of femtosecond laser pulses to excite electron-hole plasmas in semiconductors has become a major method of studying fast processes in this system in recent years. Transition times from the central Gamma valley in GaAs to the satellite X and L valleys are comparable to the reciprocal of the frequency of the phonon involved in these transitions, bringing into question the use of standard perturbation theory approaches. The authors present an initial investigation of the role of retardation arising from the finite collision duration required for such a transition to occur, through the use of a path-integral form of the quantum kinetic equation. A secondary self-scattering process and a probability of completed collisions are used to cast this equation in a semi-classical form.
UR - http://www.scopus.com/inward/record.url?scp=36149032989&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36149032989&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/7/3B/036
DO - 10.1088/0268-1242/7/3B/036
M3 - Article
AN - SCOPUS:36149032989
VL - 7
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 3 B
M1 - 036
ER -