The role of the finite collision duration in femtosecond laser studies of semiconductors

H. Hida, S. Yamaguchi, A. M. Kriman, D. K. Ferry

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The use of femtosecond laser pulses to excite electron-hole plasmas in semiconductors has become a major method of studying fast processes in this system in recent years. Transition times from the central Gamma valley in GaAs to the satellite X and L valleys are comparable to the reciprocal of the frequency of the phonon involved in these transitions, bringing into question the use of standard perturbation theory approaches. The authors present an initial investigation of the role of retardation arising from the finite collision duration required for such a transition to occur, through the use of a path-integral form of the quantum kinetic equation. A secondary self-scattering process and a probability of completed collisions are used to cast this equation in a semi-classical form.

Original languageEnglish (US)
Article number036
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - 1992

Fingerprint

Ultrashort pulses
Satellites
Scattering
Semiconductor materials
Plasmas
Kinetics
collisions
valleys
Electrons
lasers
kinetic equations
casts
perturbation theory
pulses
scattering
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

The role of the finite collision duration in femtosecond laser studies of semiconductors. / Hida, H.; Yamaguchi, S.; Kriman, A. M.; Ferry, D. K.

In: Semiconductor Science and Technology, Vol. 7, No. 3 B, 036, 1992.

Research output: Contribution to journalArticle

Hida, H. ; Yamaguchi, S. ; Kriman, A. M. ; Ferry, D. K. / The role of the finite collision duration in femtosecond laser studies of semiconductors. In: Semiconductor Science and Technology. 1992 ; Vol. 7, No. 3 B.
@article{554fdd77c7f9474fa9a09a9e82b42758,
title = "The role of the finite collision duration in femtosecond laser studies of semiconductors",
abstract = "The use of femtosecond laser pulses to excite electron-hole plasmas in semiconductors has become a major method of studying fast processes in this system in recent years. Transition times from the central Gamma valley in GaAs to the satellite X and L valleys are comparable to the reciprocal of the frequency of the phonon involved in these transitions, bringing into question the use of standard perturbation theory approaches. The authors present an initial investigation of the role of retardation arising from the finite collision duration required for such a transition to occur, through the use of a path-integral form of the quantum kinetic equation. A secondary self-scattering process and a probability of completed collisions are used to cast this equation in a semi-classical form.",
author = "H. Hida and S. Yamaguchi and Kriman, {A. M.} and Ferry, {D. K.}",
year = "1992",
doi = "10.1088/0268-1242/7/3B/036",
language = "English (US)",
volume = "7",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "3 B",

}

TY - JOUR

T1 - The role of the finite collision duration in femtosecond laser studies of semiconductors

AU - Hida, H.

AU - Yamaguchi, S.

AU - Kriman, A. M.

AU - Ferry, D. K.

PY - 1992

Y1 - 1992

N2 - The use of femtosecond laser pulses to excite electron-hole plasmas in semiconductors has become a major method of studying fast processes in this system in recent years. Transition times from the central Gamma valley in GaAs to the satellite X and L valleys are comparable to the reciprocal of the frequency of the phonon involved in these transitions, bringing into question the use of standard perturbation theory approaches. The authors present an initial investigation of the role of retardation arising from the finite collision duration required for such a transition to occur, through the use of a path-integral form of the quantum kinetic equation. A secondary self-scattering process and a probability of completed collisions are used to cast this equation in a semi-classical form.

AB - The use of femtosecond laser pulses to excite electron-hole plasmas in semiconductors has become a major method of studying fast processes in this system in recent years. Transition times from the central Gamma valley in GaAs to the satellite X and L valleys are comparable to the reciprocal of the frequency of the phonon involved in these transitions, bringing into question the use of standard perturbation theory approaches. The authors present an initial investigation of the role of retardation arising from the finite collision duration required for such a transition to occur, through the use of a path-integral form of the quantum kinetic equation. A secondary self-scattering process and a probability of completed collisions are used to cast this equation in a semi-classical form.

UR - http://www.scopus.com/inward/record.url?scp=36149032989&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36149032989&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/7/3B/036

DO - 10.1088/0268-1242/7/3B/036

M3 - Article

AN - SCOPUS:36149032989

VL - 7

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3 B

M1 - 036

ER -