The role of the boundary conditions on the current degradation in FD-SOI devices

In this paper we demonstrate the convergence properties of our electro-thermal Monte Carlo device simulator that solves self-consistently the Boltzmann transport equation for the electrons and the energy balance equations for acoustic and optical phonon bath. We also illustrate that the amount of current degradation in different technologies devices depends upon the channel length and the boundary conditions imposed on the gate electrode and the artificial boundaries. Finally we address the importance of including non-stationary transport for both electrons and phonons. We show via comparison with standard Silvaco simulations that any simulator which does not take into account the non-stationary nature of the carrier transport in the system will give wrong predictions of the current degradation and the position of the hot-spot which arises because of the different time-scales involved in the electron-optical phonons interaction and the optical phonon to acoustic phonon decay.