The role of Sb compositions on the properties of InAs/GaAsSb quantum dots (QDs)

Keun Yong Ban, Stephen P. Bremner, Darius Kuciauskas, Som N. Dahal, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

QD size, uniformity and density in InAs/GaAsSb material system for increasing Sb content are studied using Atomic Force Microscopy (AFM). AFM results show that QD density and uniformity improve with Sb content increase. The improvement of QD uniformity is ensured by the narrowing of the analysis of AFM scans. To obtain minimum VBO, InAs/GaAsSb with various Sb compositions is investigated by PL and TRPL measurements. PL data shows a blue-shift as excitation power increases as evidence of a type II band structure. Since the PL peak of 8 and 13 % Sb samples did not shift while that of 15 % Sb sample is blue-shifted with increasing the excitation power it is concluded that InAs QDs/GaAs0.86Sb0.14 would have minimum valence band offset. This tendency is supported by the change of a carrier lifetime estimated from TRPL data.

Original languageEnglish (US)
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices
DOIs
StatePublished - Apr 26 2012
EventPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States
Duration: Jan 23 2012Jan 26 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8256
ISSN (Print)0277-786X

Other

OtherPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices
CountryUnited States
CitySan Francisco, CA
Period1/23/121/26/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Ban, K. Y., Bremner, S. P., Kuciauskas, D., Dahal, S. N., & Honsberg, C. (2012). The role of Sb compositions on the properties of InAs/GaAsSb quantum dots (QDs). In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices [82561C] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8256). https://doi.org/10.1117/12.910834