The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice

Dragica Vasileska; I. Knezevic; R. Akis; D. K. Ferry

The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice

Dragica Vasileska, I. Knezevic, R. Akis, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum-mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.

Original language	English (US)
Title of host publication	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
Editors	M. Laudon, B. Romanowicz
Pages	556-559
Number of pages	4
State	Published - Dec 1 2002
Event	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico Duration: Apr 21 2002 → Apr 25 2002

Publication series

Name	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Other

Other	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
Country/Territory	Puerto Rico
City	San Juan
Period	4/21/02 → 4/25/02

Keywords

Asymmetric device structures
Mosfets
On-state current degradation
Space-quantization effect
Threshold voltage degradation

ASJC Scopus subject areas

Engineering(all)

Cite this

Vasileska, D., Knezevic, I., Akis, R., & Ferry, D. K. (2002). The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 (pp. 556-559). (2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002).

The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice. / Vasileska, Dragica; Knezevic, I.; Akis, R. et al.

2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. ed. / M. Laudon; B. Romanowicz. 2002. p. 556-559 (2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Vasileska, D, Knezevic, I, Akis, R & Ferry, DK 2002, The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice. in M Laudon & B Romanowicz (eds), 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002, pp. 556-559, 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002, San Juan, Puerto Rico, 4/21/02.

Vasileska, Dragica ; Knezevic, I. ; Akis, R. et al. / The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice. 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. editor / M. Laudon ; B. Romanowicz. 2002. pp. 556-559 (2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002).

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N2 - We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum-mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.

AB - We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum-mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.

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The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice

Abstract

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Keywords

ASJC Scopus subject areas

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