@inproceedings{3fc183713fd14b87b7d31b7d3e1a75c2,
title = "The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice",
abstract = "We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum-mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.",
keywords = "Asymmetric device structures, Mosfets, On-state current degradation, Space-quantization effect, Threshold voltage degradation",
author = "Dragica Vasileska and I. Knezevic and R. Akis and Ferry, {D. K.}",
year = "2002",
month = dec,
day = "1",
language = "English (US)",
isbn = "0970827571",
series = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
pages = "556--559",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
note = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 ; Conference date: 21-04-2002 Through 25-04-2002",
}