The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

Ehsan Vadiee; Evan A. Clinton; Joe V. Carpenter; Heather McFavilen; Chantal Arena; Zachary Holman; Christiana Honsberg; W. Alan Doolittle

doi:10.1063/1.5112498

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

Ehsan Vadiee, Evan A. Clinton, Joe V. Carpenter, Heather McFavilen, Chantal Arena, Zachary Holman, Christiana Honsberg, W. Alan Doolittle

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

GaN p⁺⁺/n⁺⁺ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 10²⁰ cm^-3 shows NDR at ∼1.8 V and a large current density of 3.4 KA/cm² at -1.0 V. Atomic resolution scanning transmission electron microscopy imaging showed no additional defects despite the doping exceeding the solubility limit in GaN allowing subsequent epitaxy of series-connected layers and devices. GaN homojunction TJs grown on bulk GaN showed an improved current density and NDR stability. In addition, the effect of Mg delta doping at the junction was investigated for the first time showing a dramatic improvement in the tunneling characteristics. A metal-organic chemical vapor deposition (MOCVD) grown InGaN light-emitting diode (LED) with an MBE grown GaN homojunction tunnel contact to the MOCVD grown p-GaN layer shows superior lateral conductivity and improved luminescence uniformity, but suffers an added voltage penalty, assumed to be due to interface impurities, compared to control LED with indium-tin-oxide.

Original language	English (US)
Article number	083110
Journal	Journal of Applied Physics
Volume	126
Issue number	8
DOIs	https://doi.org/10.1063/1.5112498
State	Published - Aug 28 2019

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.5112498

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title = "The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance",

abstract = "GaN p++/n++ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 1020 cm-3 shows NDR at ∼1.8 V and a large current density of 3.4 KA/cm2 at -1.0 V. Atomic resolution scanning transmission electron microscopy imaging showed no additional defects despite the doping exceeding the solubility limit in GaN allowing subsequent epitaxy of series-connected layers and devices. GaN homojunction TJs grown on bulk GaN showed an improved current density and NDR stability. In addition, the effect of Mg delta doping at the junction was investigated for the first time showing a dramatic improvement in the tunneling characteristics. A metal-organic chemical vapor deposition (MOCVD) grown InGaN light-emitting diode (LED) with an MBE grown GaN homojunction tunnel contact to the MOCVD grown p-GaN layer shows superior lateral conductivity and improved luminescence uniformity, but suffers an added voltage penalty, assumed to be due to interface impurities, compared to control LED with indium-tin-oxide.",

author = "Ehsan Vadiee and Clinton, {Evan A.} and Carpenter, {Joe V.} and Heather McFavilen and Chantal Arena and Zachary Holman and Christiana Honsberg and {Alan Doolittle}, W.",

note = "Funding Information: This work was supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under Nos. NSF CA EEC-1041895 and NSF SG DMR-1710032 and in part by the Advanced Research Projects Agency-Energy, U.S. Department of Energy under Award No. DEAR0000470. Publisher Copyright: {\textcopyright} 2019 Author(s).",

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AU - Vadiee, Ehsan

AU - Clinton, Evan A.

AU - Carpenter, Joe V.

AU - McFavilen, Heather

AU - Arena, Chantal

AU - Holman, Zachary

AU - Honsberg, Christiana

AU - Alan Doolittle, W.

N1 - Funding Information: This work was supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under Nos. NSF CA EEC-1041895 and NSF SG DMR-1710032 and in part by the Advanced Research Projects Agency-Energy, U.S. Department of Energy under Award No. DEAR0000470. Publisher Copyright: © 2019 Author(s).

PY - 2019/8/28

Y1 - 2019/8/28

N2 - GaN p++/n++ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 1020 cm-3 shows NDR at ∼1.8 V and a large current density of 3.4 KA/cm2 at -1.0 V. Atomic resolution scanning transmission electron microscopy imaging showed no additional defects despite the doping exceeding the solubility limit in GaN allowing subsequent epitaxy of series-connected layers and devices. GaN homojunction TJs grown on bulk GaN showed an improved current density and NDR stability. In addition, the effect of Mg delta doping at the junction was investigated for the first time showing a dramatic improvement in the tunneling characteristics. A metal-organic chemical vapor deposition (MOCVD) grown InGaN light-emitting diode (LED) with an MBE grown GaN homojunction tunnel contact to the MOCVD grown p-GaN layer shows superior lateral conductivity and improved luminescence uniformity, but suffers an added voltage penalty, assumed to be due to interface impurities, compared to control LED with indium-tin-oxide.

AB - GaN p++/n++ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 1020 cm-3 shows NDR at ∼1.8 V and a large current density of 3.4 KA/cm2 at -1.0 V. Atomic resolution scanning transmission electron microscopy imaging showed no additional defects despite the doping exceeding the solubility limit in GaN allowing subsequent epitaxy of series-connected layers and devices. GaN homojunction TJs grown on bulk GaN showed an improved current density and NDR stability. In addition, the effect of Mg delta doping at the junction was investigated for the first time showing a dramatic improvement in the tunneling characteristics. A metal-organic chemical vapor deposition (MOCVD) grown InGaN light-emitting diode (LED) with an MBE grown GaN homojunction tunnel contact to the MOCVD grown p-GaN layer shows superior lateral conductivity and improved luminescence uniformity, but suffers an added voltage penalty, assumed to be due to interface impurities, compared to control LED with indium-tin-oxide.

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The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

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