Abstract
Angular-dependent channeling Rutherford backscattering spectroscopy (c-RBS) has been used to quantify the fraction of Cr atoms on substitutional, interstitial, and random sites in epitaxial Ga1-x Crx N films grown by reactive molecular-beam epitaxy. The morphology of these films and correlation with their magnetic properties has been investigated. Films grown at temperatures below ~750 °C have up to 90% of Cr occupying substitutional sites. Post-growth annealing at 825 °C results in a systematic drop in the fraction of substitutional Cr as well as a fall off in the ferromagnetic signal. The roles of nonsubstitutional Cr in transferring charge from the Cr t2 band and segregation of substitutional Cr in the loss of magnetism are discussed. Overall, these results provide strong microscopic evidence that Cr-doped III-N systems are dilute magnetic semiconductors.
| Original language | English (US) |
|---|---|
| Article number | 012504 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2005 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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The role of Cr substitution on the ferromagnetic properties of Ga 1-xCr xN. / Singh, Rakesh; Wu, Stephen Y.; Liu, H. X.; Gu, Lin; Smith, David; Newman, Nathan.
In: Applied Physics Letters, Vol. 86, No. 1, 012504, 01.2005.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The role of Cr substitution on the ferromagnetic properties of Ga 1-xCr xN
AU - Singh, Rakesh
AU - Wu, Stephen Y.
AU - Liu, H. X.
AU - Gu, Lin
AU - Smith, David
AU - Newman, Nathan
PY - 2005/1
Y1 - 2005/1
N2 - Angular-dependent channeling Rutherford backscattering spectroscopy (c-RBS) has been used to quantify the fraction of Cr atoms on substitutional, interstitial, and random sites in epitaxial Ga1-x Crx N films grown by reactive molecular-beam epitaxy. The morphology of these films and correlation with their magnetic properties has been investigated. Films grown at temperatures below ~750 °C have up to 90% of Cr occupying substitutional sites. Post-growth annealing at 825 °C results in a systematic drop in the fraction of substitutional Cr as well as a fall off in the ferromagnetic signal. The roles of nonsubstitutional Cr in transferring charge from the Cr t2 band and segregation of substitutional Cr in the loss of magnetism are discussed. Overall, these results provide strong microscopic evidence that Cr-doped III-N systems are dilute magnetic semiconductors.
AB - Angular-dependent channeling Rutherford backscattering spectroscopy (c-RBS) has been used to quantify the fraction of Cr atoms on substitutional, interstitial, and random sites in epitaxial Ga1-x Crx N films grown by reactive molecular-beam epitaxy. The morphology of these films and correlation with their magnetic properties has been investigated. Films grown at temperatures below ~750 °C have up to 90% of Cr occupying substitutional sites. Post-growth annealing at 825 °C results in a systematic drop in the fraction of substitutional Cr as well as a fall off in the ferromagnetic signal. The roles of nonsubstitutional Cr in transferring charge from the Cr t2 band and segregation of substitutional Cr in the loss of magnetism are discussed. Overall, these results provide strong microscopic evidence that Cr-doped III-N systems are dilute magnetic semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=19744382705&partnerID=8YFLogxK
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U2 - 10.1063/1.1843276
DO - 10.1063/1.1843276
M3 - Article
AN - SCOPUS:19744382705
VL - 86
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
M1 - 012504
ER -