The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis

Stephen K. O'Leary, Shane Johnson, P. K. Lim

Research output: Contribution to journalArticle

250 Citations (Scopus)

Abstract

An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Taue gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.

Original languageEnglish (US)
Pages (from-to)3334-3340
Number of pages7
JournalJournal of Applied Physics
Volume82
Issue number7
DOIs
StatePublished - Oct 1 1997

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amorphous semiconductors
optical spectrum
optical absorption
absorption spectra
electronics
photons
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor : An empirical analysis. / O'Leary, Stephen K.; Johnson, Shane; Lim, P. K.

In: Journal of Applied Physics, Vol. 82, No. 7, 01.10.1997, p. 3334-3340.

Research output: Contribution to journalArticle

@article{63ff83a98ffc45b6830844db5134a405,
title = "The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis",
abstract = "An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Taue gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.",
author = "O'Leary, {Stephen K.} and Shane Johnson and Lim, {P. K.}",
year = "1997",
month = "10",
day = "1",
doi = "10.1063/1.365643",
language = "English (US)",
volume = "82",
pages = "3334--3340",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor

T2 - An empirical analysis

AU - O'Leary, Stephen K.

AU - Johnson, Shane

AU - Lim, P. K.

PY - 1997/10/1

Y1 - 1997/10/1

N2 - An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Taue gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.

AB - An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Taue gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.

UR - http://www.scopus.com/inward/record.url?scp=0001720394&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001720394&partnerID=8YFLogxK

U2 - 10.1063/1.365643

DO - 10.1063/1.365643

M3 - Article

AN - SCOPUS:0001720394

VL - 82

SP - 3334

EP - 3340

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -