### Abstract

An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Taue gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.

Original language | English (US) |
---|---|

Pages (from-to) | 3334-3340 |

Number of pages | 7 |

Journal | Journal of Applied Physics |

Volume | 82 |

Issue number | 7 |

DOIs | |

State | Published - Oct 1 1997 |

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### ASJC Scopus subject areas

- Physics and Astronomy(all)

### Cite this

*Journal of Applied Physics*,

*82*(7), 3334-3340. https://doi.org/10.1063/1.365643

**The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor : An empirical analysis.** / O'Leary, Stephen K.; Johnson, Shane; Lim, P. K.

Research output: Contribution to journal › Article

*Journal of Applied Physics*, vol. 82, no. 7, pp. 3334-3340. https://doi.org/10.1063/1.365643

}

TY - JOUR

T1 - The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor

T2 - An empirical analysis

AU - O'Leary, Stephen K.

AU - Johnson, Shane

AU - Lim, P. K.

PY - 1997/10/1

Y1 - 1997/10/1

N2 - An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Taue gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.

AB - An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Taue gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.

UR - http://www.scopus.com/inward/record.url?scp=0001720394&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001720394&partnerID=8YFLogxK

U2 - 10.1063/1.365643

DO - 10.1063/1.365643

M3 - Article

AN - SCOPUS:0001720394

VL - 82

SP - 3334

EP - 3340

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -