The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films

L. Bergman, M. T. McClure, J. T. Glass, R. J. Nemanich

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116 Scopus citations

Abstract

Raman and various photoluminescence (PL) techniques were employed to investigate the role of nitrogen doping on the optical spectra of chemical-vapor-deposited (CVD) diamond films and to determine the origin of the characteristic broadband luminescence which is observed from approximately 1.5 to 2.5 eV and centered at ∼2 eV. The PL transitions attributed to the zero-phonon lines (ZPL) of nitrogen centers are observed at 1.945 and 2.154 eV. A new possible nitrogen center at 1.967 eV is also observed as well as the band A luminescence centered at ∼2.46 eV. The experimental results preclude the possibility of the broadband PL being due to electron-lattice interaction of the nitrogen ZPL centers. We establish the presence of an in-gap state distribution in CVD diamond films attributed to the sp2 disordered phase and show that its optical transitions are the likely cause of the broadband luminescence. A model of the in-gap state distribution is presented which is similar to models previously developed for amorphous materials.

Original languageEnglish (US)
Pages (from-to)3020-3027
Number of pages8
JournalJournal of Applied Physics
Volume76
Issue number5
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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