The nature of crystalline defects in a-plane GaN films

R. Liu, A. Bell, V. R. D'Costa, Fernando Ponce, C. Q. Chen, J. W. Yang, M. A. Khan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The microstructural and optical properties of a-plane GaN grown by selective area lateral epitaxy have been studied. Lateral overgrowth along the +c and -c directions exhibits very different properties. For +c, the growth is almost free of stacking faults; whereas the opposite growth direction induces a high density of stacking faults bounded by partial dislocations. Cathodoluminescence characterization indicates that the defective region induces a distinct emission at ∼363nm at 10K. In addition, localized emission spectra indicate that materials grown on different facets exhibit distinct luminescence properties, suggesting that impurity incorporation depends on the nature of the growth surface.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages217-218
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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