The nature of arsenic incorporation in GaN

A. Bell, Fernando Ponce, S. V. Novikov, C. T. Foxon, I. Harrison

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

A systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4 × 1017 to 4.2 × 1018 cm-3. Secondary ion mass spectroscopy data show that increasing the As concentration has the effect of increasing the amount of As in the nitrogen site as compared to As in the gallium site. This trend is used to explain the reduction in carrier mobility with increasing As concentration.

Original languageEnglish (US)
Pages (from-to)3239-3241
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number20
DOIs
StatePublished - Nov 12 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'The nature of arsenic incorporation in GaN'. Together they form a unique fingerprint.

  • Cite this

    Bell, A., Ponce, F., Novikov, S. V., Foxon, C. T., & Harrison, I. (2001). The nature of arsenic incorporation in GaN. Applied Physics Letters, 79(20), 3239-3241. https://doi.org/10.1063/1.1418030