The nature of arsenic incorporation in GaN

A. Bell; Fernando Ponce; S. V. Novikov; C. T. Foxon; I. Harrison

doi:10.1063/1.1418030

The nature of arsenic incorporation in GaN

A. Bell, Fernando Ponce, S. V. Novikov, C. T. Foxon, I. Harrison

Physics

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9 Scopus citations

Abstract

A systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4 × 10¹⁷ to 4.2 × 10¹⁸ cm^-3. Secondary ion mass spectroscopy data show that increasing the As concentration has the effect of increasing the amount of As in the nitrogen site as compared to As in the gallium site. This trend is used to explain the reduction in carrier mobility with increasing As concentration.

Original language	English (US)
Pages (from-to)	3239-3241
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	20
DOIs	https://doi.org/10.1063/1.1418030
State	Published - Nov 12 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1418030

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title = "The nature of arsenic incorporation in GaN",

abstract = "A systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4 × 1017 to 4.2 × 1018 cm-3. Secondary ion mass spectroscopy data show that increasing the As concentration has the effect of increasing the amount of As in the nitrogen site as compared to As in the gallium site. This trend is used to explain the reduction in carrier mobility with increasing As concentration.",

author = "A. Bell and Fernando Ponce and Novikov, {S. V.} and Foxon, {C. T.} and I. Harrison",

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AU - Bell, A.

AU - Ponce, Fernando

AU - Novikov, S. V.

AU - Foxon, C. T.

AU - Harrison, I.

PY - 2001/11/12

Y1 - 2001/11/12

N2 - A systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4 × 1017 to 4.2 × 1018 cm-3. Secondary ion mass spectroscopy data show that increasing the As concentration has the effect of increasing the amount of As in the nitrogen site as compared to As in the gallium site. This trend is used to explain the reduction in carrier mobility with increasing As concentration.

AB - A systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4 × 1017 to 4.2 × 1018 cm-3. Secondary ion mass spectroscopy data show that increasing the As concentration has the effect of increasing the amount of As in the nitrogen site as compared to As in the gallium site. This trend is used to explain the reduction in carrier mobility with increasing As concentration.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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The nature of arsenic incorporation in GaN

Abstract

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