The integration of low-k dielectric material hydrogen silsesquioxane (HSQ) with nitride thin films as barriers

Y. Zeng, L. Chen, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

HSQ (hydrogen silsesquioxane) is one of the promising low-k materials used in VLSI technology as an intra-metal dielectric to reduce capacitance-related issues. Like any other dielectrics, the integration of HSQ in multilevel interconnect schemes has been of considerable importance. In this study, the compatibility of HSQ with different nitride barrier layers, such as PVD and CVD TiN, PVD TaN, and CVD W 2N, has been investigated by using a variety of techniques. The refractory metal barriers, Ti and Ta, are also included for a comparison. The degradation of HSQ films indicates a strong underlying barrier layer dependence. With CVD nitrides or refractory metals as barrier, HSQ exhibits a better structural and property stability than that with PVD nitrides. The possible mechanisms have been discussed to account for these observations.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsG.S. Oehrlein, K. Maex, Y.-C. Joo, S. Ogawa, J.T. Wetzel
Volume612
StatePublished - 2000
EventMaterials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics - San Francisco, CA, United States
Duration: Apr 23 2000Apr 27 2000

Other

OtherMaterials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics
CountryUnited States
CitySan Francisco, CA
Period4/23/004/27/00

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Zeng, Y., Chen, L., & Alford, T. (2000). The integration of low-k dielectric material hydrogen silsesquioxane (HSQ) with nitride thin films as barriers. In G. S. Oehrlein, K. Maex, Y-C. Joo, S. Ogawa, & J. T. Wetzel (Eds.), Materials Research Society Symposium - Proceedings (Vol. 612)