Abstract
HSQ (hydrogen silsesquioxane) is one of the promising low-k materials used in VLSI technology as an intra-metal dielectric to reduce capacitance-related issues. Like any other dielectrics, the integration of HSQ in multilevel interconnect schemes has been of considerable importance. In this study, the compatibility of HSQ with different nitride barrier layers, such as PVD and CVD TiN, PVD TaN, and CVD W 2N, has been investigated by using a variety of techniques. The refractory metal barriers, Ti and Ta, are also included for a comparison. The degradation of HSQ films indicates a strong underlying barrier layer dependence. With CVD nitrides or refractory metals as barrier, HSQ exhibits a better structural and property stability than that with PVD nitrides. The possible mechanisms have been discussed to account for these observations.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | G.S. Oehrlein, K. Maex, Y.-C. Joo, S. Ogawa, J.T. Wetzel |
Volume | 612 |
State | Published - 2000 |
Event | Materials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics - San Francisco, CA, United States Duration: Apr 23 2000 → Apr 27 2000 |
Other
Other | Materials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 4/23/00 → 4/27/00 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials