We investigate the influence of space quantization and poly-gate depletion on the inversion layer capacitance Cinv, total gate capacitance Ctot and threshold voltage VT in scaled Si-MOSFETs. We also present an analytical expression for the total gate capacitance Ctot that uses classical charge description and takes into account the depletion of the poly-silicon gates. Our simulation results suggest that poly-gate depletion influences the magnitude of Ctot more than the quantum mechanical charge description. For the threshold voltage VT the situation is more complicated; it is significantly affected by both the poly-gate depletion and the quantum effects in the channel.
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering