The influence of space quantization effects on the threshold voltage, inversion layer and total gate capacitances in scaled Si-MOSFETs

Dragica Vasileska, David K. Ferry

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We investigate the influence of space quantization and poly-gate depletion on the inversion layer capacitance Cinv, total gate capacitance Ctot and threshold voltage VT in scaled Si-MOSFETs. We also present an analytical expression for the total gate capacitance Ctot that uses classical charge description and takes into account the depletion of the poly-silicon gates. Our simulation results suggest that poly-gate depletion influences the magnitude of Ctot more than the quantum mechanical charge description. For the threshold voltage VT the situation is more complicated; it is significantly affected by both the poly-gate depletion and the quantum effects in the channel.

Original languageEnglish (US)
Pages (from-to)192-197
Number of pages6
JournalNanotechnology
Volume10
Issue number2
DOIs
StatePublished - Dec 1 1999

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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