The Influence of Al2O3 Passivation of III-V on Ge Multijunction Solar Cells to the Spatial Distribution of Luminescent Coupling Effect

Bernice Mae F.Yu Jeco, Abhinav Chikhalkar, Maxime Giteau, Ryo Tamaki, Nazmul Ahsan, Richard R. King, Yoshitaka Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The nonuniformity of luminescent coupling (LC) effect in III-V based multijunction solar cells (MJSCs) is partly ascribed to recombination at perimeter defects. An attempt to solve this was done by sidewall passivation of InGaP/GaAs/Ge triple junction solar cells through atomic layer deposition of thin Al2O3. Results revealed that sidewall passivation of a complete MJSC can increase LC current collection in a limiting GaAs middle cell by 21.9% and enhance its uniformity by 7.2%; hence, demonstrating a non-invasive way to improve current matching among subcells.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1078-1082
Number of pages5
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period6/16/196/21/19

Keywords

  • Index Terms - atomic layer deposition
  • laser beam-induced current mapping
  • luminescence coupling
  • passivation
  • photovoltaic cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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