In this review paper we want to emphasize the importance of having accurate thermal conductivity models for modeling self-heating effects on the device level. For that purpose, we first consider thin silicon films and calculate (using Sondheimer's approach) their thermal conductivity that incorporates boundary scattering. We then compare the obtained thermal conductivity data with experimental measurements to prove the excellent model agreement with the experimental trends. The parameterized thermal conductivity data are then used in the higher level modeling of self-heating effects in fully-depleted (FD) SOI devices from different technology generations. We find that temperature and thickness dependent modeling of the thermal conductivity is essential for the 25 nanometers technology node. We have also taken into account the anisotropy of the thermal conductivity and modeled devices with (100) and (110) crystallographic orientation. We found out that from thermal point of view the (110) device behaves better, but the (100) device has higher on-current.

Original languageEnglish (US)
Pages (from-to)601-610
Number of pages10
JournalJournal of Computational Electronics
Issue number4
StatePublished - Dec 1 2013


  • BTE
  • Phonons
  • SOI devices
  • Self-heating

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering


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