The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon

Tine Uberg Narland, Simone Bernardini, Halvard Haug, Nathan Stoddard, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work we show that the high minority carrier lifetime in as-grown Ga-Si wafers is dominated by low levels of iron contamination incorporated during silicon growth. Upon phosphorous diffusion iron is however effectively removed, increasing the bulk carrier lifetime from a few hundred micro-seconds to well above one milli-second. Lifetime spectroscopy in combination with Shockley Read Hall theory was used to determine the concentrations of Fei and FeGa complexes in the course of the FeGa association. Finally, we use the estimated concentrations of FeGa as a function of time of storage in the dark to validate that FeGa association follows the laws of coulombic attraction similar to FeB.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-6
Number of pages6
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • FeGa association
  • Gallium doped silicon
  • Injection dependent lifetime spectroscopy
  • Iron contamination
  • Light induced degradation

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Narland, T. U., Bernardini, S., Haug, H., Stoddard, N., & Bertoni, M. (2018). The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-6). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366155