The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon

Tine Uberg Norland, Simone Bernardini, Halvard Haug, Nathan Stoddard, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work we show that the high minority carrier lifetime in as-grown Ga-Si wafers is dominated by low levels of iron contamination incorporated during silicon growth. Upon phosphorous diffusion iron is however effectively removed, increasing the bulk carrier lifetime from a few hundred microseconds to well above one milli-second. Lifetime spectroscopy in combination with Shockley Read Hall theory was used to determine the concentrations of Fei and FeGa complexes in the course of the FeGa association. Finally, we use the estimated concentrations of FeGa as a function of time of storage in the dark to validate that FeGa association follows the laws of coulombic attraction similar to FeB.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages62-67
Number of pages6
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Keywords

  • FeGa association
  • gallium doped silicon
  • injection dependent lifetime spectroscopy
  • iron contamination
  • light induced degradation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Norland, T. U., Bernardini, S., Haug, H., Stoddard, N., & Bertoni, M. (2016). The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 62-67). [7749409] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749409