The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon

Tine Uberg Norland; Simone Bernardini; Halvard Haug; Nathan Stoddard; Mariana Bertoni

doi:10.1109/PVSC.2016.7749409

The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon

Tine Uberg Norland, Simone Bernardini, Halvard Haug, Nathan Stoddard, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work we show that the high minority carrier lifetime in as-grown Ga-Si wafers is dominated by low levels of iron contamination incorporated during silicon growth. Upon phosphorous diffusion iron is however effectively removed, increasing the bulk carrier lifetime from a few hundred microseconds to well above one milli-second. Lifetime spectroscopy in combination with Shockley Read Hall theory was used to determine the concentrations of Fe_i and FeGa complexes in the course of the FeGa association. Finally, we use the estimated concentrations of FeGa as a function of time of storage in the dark to validate that FeGa association follows the laws of coulombic attraction similar to FeB.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	62-67
Number of pages	6
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749409
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

FeGa association
gallium doped silicon
injection dependent lifetime spectroscopy
iron contamination
light induced degradation

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7749409

Cite this

Norland, T. U., Bernardini, S., Haug, H., Stoddard, N., & Bertoni, M. (2016). The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 62-67). Article 7749409 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749409

The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon. / Norland, Tine Uberg; Bernardini, Simone; Haug, Halvard et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 62-67 7749409 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Norland, TU, Bernardini, S, Haug, H, Stoddard, N & Bertoni, M 2016, The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749409, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 62-67, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749409

Norland TU, Bernardini S, Haug H, Stoddard N, Bertoni M. The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 62-67. 7749409. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749409

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title = "The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon",

abstract = "In this work we show that the high minority carrier lifetime in as-grown Ga-Si wafers is dominated by low levels of iron contamination incorporated during silicon growth. Upon phosphorous diffusion iron is however effectively removed, increasing the bulk carrier lifetime from a few hundred microseconds to well above one milli-second. Lifetime spectroscopy in combination with Shockley Read Hall theory was used to determine the concentrations of Fei and FeGa complexes in the course of the FeGa association. Finally, we use the estimated concentrations of FeGa as a function of time of storage in the dark to validate that FeGa association follows the laws of coulombic attraction similar to FeB.",

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AB - In this work we show that the high minority carrier lifetime in as-grown Ga-Si wafers is dominated by low levels of iron contamination incorporated during silicon growth. Upon phosphorous diffusion iron is however effectively removed, increasing the bulk carrier lifetime from a few hundred microseconds to well above one milli-second. Lifetime spectroscopy in combination with Shockley Read Hall theory was used to determine the concentrations of Fei and FeGa complexes in the course of the FeGa association. Finally, we use the estimated concentrations of FeGa as a function of time of storage in the dark to validate that FeGa association follows the laws of coulombic attraction similar to FeB.

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The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon

Abstract

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Keywords

ASJC Scopus subject areas

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