Abstract

A state-of-the-art simulator for the calculation of low-field mobility in inversion layers is presented in this work that accounts for the collisional broadening of the electronic states via the solution of the Dyson equation for the retarded Green's function. The self-consistent Born approximation is used for the calculation of the self-energy contributions due to Coulomb, surface-roughness, acoustic, and non-polar optical phonon scattering. The simulated mobility results for three generations of MOSFET devices are in agreement with the experimental data. At nanoscale dimensions, surface-roughness scattering dominates the collisional broadening of the states and the renormalization of the spectrum.

Original languageEnglish (US)
Article number114303
JournalJournal of Applied Physics
Volume122
Issue number11
DOIs
StatePublished - Sep 21 2017

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electron mobility
surface roughness
field effect transistors
scattering
Born approximation
simulators
Green's functions
inversions
acoustics
electronics
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs. / Kannan, Gokula; Vasileska, Dragica.

In: Journal of Applied Physics, Vol. 122, No. 11, 114303, 21.09.2017.

Research output: Contribution to journalArticle

@article{8bae36ea88414538babd07ab4fea13ad,
title = "The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs",
abstract = "A state-of-the-art simulator for the calculation of low-field mobility in inversion layers is presented in this work that accounts for the collisional broadening of the electronic states via the solution of the Dyson equation for the retarded Green's function. The self-consistent Born approximation is used for the calculation of the self-energy contributions due to Coulomb, surface-roughness, acoustic, and non-polar optical phonon scattering. The simulated mobility results for three generations of MOSFET devices are in agreement with the experimental data. At nanoscale dimensions, surface-roughness scattering dominates the collisional broadening of the states and the renormalization of the spectrum.",
author = "Gokula Kannan and Dragica Vasileska",
year = "2017",
month = "9",
day = "21",
doi = "10.1063/1.5003253",
language = "English (US)",
volume = "122",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs

AU - Kannan, Gokula

AU - Vasileska, Dragica

PY - 2017/9/21

Y1 - 2017/9/21

N2 - A state-of-the-art simulator for the calculation of low-field mobility in inversion layers is presented in this work that accounts for the collisional broadening of the electronic states via the solution of the Dyson equation for the retarded Green's function. The self-consistent Born approximation is used for the calculation of the self-energy contributions due to Coulomb, surface-roughness, acoustic, and non-polar optical phonon scattering. The simulated mobility results for three generations of MOSFET devices are in agreement with the experimental data. At nanoscale dimensions, surface-roughness scattering dominates the collisional broadening of the states and the renormalization of the spectrum.

AB - A state-of-the-art simulator for the calculation of low-field mobility in inversion layers is presented in this work that accounts for the collisional broadening of the electronic states via the solution of the Dyson equation for the retarded Green's function. The self-consistent Born approximation is used for the calculation of the self-energy contributions due to Coulomb, surface-roughness, acoustic, and non-polar optical phonon scattering. The simulated mobility results for three generations of MOSFET devices are in agreement with the experimental data. At nanoscale dimensions, surface-roughness scattering dominates the collisional broadening of the states and the renormalization of the spectrum.

UR - http://www.scopus.com/inward/record.url?scp=85029876636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029876636&partnerID=8YFLogxK

U2 - 10.1063/1.5003253

DO - 10.1063/1.5003253

M3 - Article

VL - 122

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 114303

ER -