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The impact of stress-induced defects on MOS electrostatics and short-channel effects
Ivan S. Esqueda
Research output
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Contribution to journal
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Article
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peer-review
4
Scopus citations
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Dive into the research topics of 'The impact of stress-induced defects on MOS electrostatics and short-channel effects'. Together they form a unique fingerprint.
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Engineering & Materials Science
Oxide semiconductors
71%
Electrostatics
64%
Oxides
51%
Defects
41%
Metals
38%
Charge density
28%
MOS devices
27%
Hot carriers
26%
Poisson equation
25%
MOSFET devices
23%
Physics & Astronomy
metal oxide semiconductors
61%
electrostatics
45%
traps
33%
defects
33%
oxides
28%
scaling
20%
Poisson equation
15%
approximation
15%
semiconductor devices
15%
depletion
13%
derivation
12%
inversions
12%
field effect transistors
11%
profiles
8%
simulation
5%
Chemical Compounds
Interface Trap
100%
Electrostatic Potential
41%
Field Effect
19%
Charge Density
19%
Simulation
12%