The impact of correlation between NBTI and TDDB on the performance of digital circuits

Hong Luo, Yu Wang, Jyothi Velamala, Yu Cao, Yuan Xie, Huazhong Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

With integrated circuits scale into the nano-scale era, aging effect becomes one of the most important design challenges. Both the biased temperature instability (BTI) and time-dependent dielectric breakdown (TDDB) can significantly degrade the performance of the circuits. In this paper, we consider the correlation between BTI and TDDB, and apply the correlation model to digital circuit analysis for the first time. The results show that the correlation can lead to 10.42% further more delay degradation.

Original languageEnglish (US)
Title of host publication54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2011
DOIs
StatePublished - Oct 13 2011
Event54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2011 - Seoul, Korea, Republic of
Duration: Aug 7 2011Aug 10 2011

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746

Other

Other54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2011
CountryKorea, Republic of
CitySeoul
Period8/7/118/10/11

Keywords

  • Aging
  • BTI
  • Correlation
  • TDDB

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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