The high resolution electron microscopy of stacking defects in Cu–Zn–Al shape memory alloy

J. M. Cook, M. A. O'Keefe, David Smith, W. M. Stobbs

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

The characteristic defects in the martensitic phase of the memory alloy Cu–Zn–Al have been investigated using the Cambridge University 600 kV High Resolution Electron Microscope. Conditions are found under which the images can be quantitatively simulated when this involves the transfer of structural information at resolutions beyond the first zero of the contrast transfer function. Defects of sequence‐type were positively identified by the comparison of high‐resolution micrographs with full dynamical image simulations. 1983 Blackwell Science Ltd

Original languageEnglish (US)
Pages (from-to)295-306
Number of pages12
JournalJournal of Microscopy
Volume129
Issue number3
DOIs
StatePublished - 1983
Externally publishedYes

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Electron Microscopy
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Keywords

  • Cu–Zn–Al
  • HREM
  • shape memory
  • stacking faults

ASJC Scopus subject areas

  • Pathology and Forensic Medicine
  • Histology

Cite this

The high resolution electron microscopy of stacking defects in Cu–Zn–Al shape memory alloy. / Cook, J. M.; O'Keefe, M. A.; Smith, David; Stobbs, W. M.

In: Journal of Microscopy, Vol. 129, No. 3, 1983, p. 295-306.

Research output: Contribution to journalArticle

Cook, J. M. ; O'Keefe, M. A. ; Smith, David ; Stobbs, W. M. / The high resolution electron microscopy of stacking defects in Cu–Zn–Al shape memory alloy. In: Journal of Microscopy. 1983 ; Vol. 129, No. 3. pp. 295-306.
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