The generation of misfit dislocations in facet-controlled growth of AlGaNGaN films

D. Cherns, S. L. Sahonta, R. Liu, Fernando Ponce, H. Amano, I. Akasaki

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Abstract

The relaxation of tensile stresses in AlGaN layers grown on GaN(0001) sapphire by facet-controlled epitaxial lateral overgrowth is reported. It is shown that a -type misfit dislocations are introduced at inclined {11 2- 2} AlGaNGaN interfaces, with strong evidence for a half-loop nucleation and glide mechanism driven by shear stresses present on the (0001) slip plane. In addition to relieving misfit stresses, these dislocations introduce grain rotations of up to 10-2 rad across the AlGaNGaN boundaries, leading to tilt boundaries at the meeting front between laterally growing wings and between regions growing in the lateral and [0001] directions. The effects of these processes on the defect density in subsequent layers are examined.

Original languageEnglish (US)
Pages (from-to)4923-4925
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number21
DOIs
StatePublished - Nov 2004

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flat surfaces
stress relieving
tensile stress
wings
shear stress
sapphire
slip
nucleation
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

The generation of misfit dislocations in facet-controlled growth of AlGaNGaN films. / Cherns, D.; Sahonta, S. L.; Liu, R.; Ponce, Fernando; Amano, H.; Akasaki, I.

In: Applied Physics Letters, Vol. 85, No. 21, 11.2004, p. 4923-4925.

Research output: Contribution to journalArticle

Cherns, D. ; Sahonta, S. L. ; Liu, R. ; Ponce, Fernando ; Amano, H. ; Akasaki, I. / The generation of misfit dislocations in facet-controlled growth of AlGaNGaN films. In: Applied Physics Letters. 2004 ; Vol. 85, No. 21. pp. 4923-4925.
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