The formation of ordered structures in InGaN layers

M. Rao, Nathan Newman, S. Mahajan

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We investigated atomic ordering in InxGa1-xN layers for x between 0.03 and 0.28 using transmission electron microscopy. We demonstrate that {1 0 -1 1} facets play a role in 1:1 ordering. Deviations in composition from x = 0.5 are accommodated by the formation of small ordered regions embedded in a short-range ordered or disordered matrix.

Original languageEnglish (US)
Pages (from-to)33-36
Number of pages4
JournalScripta Materialia
Volume56
Issue number1
DOIs
StatePublished - Jan 2007
Externally publishedYes

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flat surfaces
Transmission electron microscopy
deviation
transmission electron microscopy
matrices
Chemical analysis

Keywords

  • Chemical vapor deposition (CVD)
  • Compound semiconductors
  • Group III nitrides
  • Ordering
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Metals and Alloys

Cite this

The formation of ordered structures in InGaN layers. / Rao, M.; Newman, Nathan; Mahajan, S.

In: Scripta Materialia, Vol. 56, No. 1, 01.2007, p. 33-36.

Research output: Contribution to journalArticle

Rao, M. ; Newman, Nathan ; Mahajan, S. / The formation of ordered structures in InGaN layers. In: Scripta Materialia. 2007 ; Vol. 56, No. 1. pp. 33-36.
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