Abstract
A full-wave finite-element method (FEM) is formulated and applied in the analysis of practical electronic packaging circuits and interconnects. The method is used to calculate S-parameters of unshielded microwave components such as patch antennas, filters, spiral inductors, bridges, bond wires, and microstrip transitions through a via. Although only representative microwave passive circuits and interconnects are analyzed in this paper, the underlined formulation is applicable to structures of arbitrary geometrical complexities including microstrip and coplanar-waveguide transitions, multiple conducting vias and solder bumps, multiple striplines, and multilayer substrates. The accuracy of the finite-element formulation is extensively verified by calculating the respective S-parameters and comparing them with results obtained using the finite-difference time-domain (FDTD) method. Computational statistics for both methods are also discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1868-1874 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 45 |
| Issue number | 10 PART 2 |
| DOIs | |
| State | Published - Dec 1 1997 |
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Keywords
- Electronic packaging
- Finite-element method
- Interconnects
- Passive circuits
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering