Abstract

Many sustainability issues arise during the manufacturing processes that are currently used for solar cells. Solar energy is a renewable energy source that is independent of the earth's resources, and it is therefore important for the development of more sustainable technologies. Microwave annealing (MW) has been proposed as a technically feasible fabrication scheme for large area silicon solar cells. Apart from that, microwave annealing has been demonstrated to be a promising alternative for repairing damage and electrically activating dopants in ion-implanted semiconductors for integrated circuit manufacturing. A microwave oven is cheaper than conventional furnace systems. In addition, microwave heating is much more efficient than conventional furnace heating, as heating is directly produced inside the material. This minimizes the loss of energy due to heating of the ambient. There is a need for more efficient processing techniques. In this study, microwave annealing is used as an alternative to the current post- implantation processing. Arsenic-doped silicon was microwave annealed (with an alumina- coated silicon carbide susceptor) to activate dopant atoms and to repair damage that was caused by ion implantation. Sheet resistance and Hall effect measurements were used to assess the extent of dopant activation. Rutherford backscattering spectrometry (RBS) with ion channeling was conducted to determine the extent of recrystallization. The dopant activation and recrystallization resulting from microwave annealing is compared with that resulting from conventional rapid thermal annealing (RTA) with the same heating profile. The results show that when compared to RTA, susceptor-assisted microwave annealing results in better dopant activation for shorter anneal times under the same heating conditions.

Original languageEnglish (US)
Title of host publicationTMS Annual Meeting
PublisherMinerals, Metals and Materials Society
Pages141-148
Number of pages8
Volume2015-January
EditionJanuary
StatePublished - 2015
EventEPD Congress 2015 - TMS 2015 144th Annual Meeting and Exhibition - Orlando, United States
Duration: Mar 15 2015Mar 19 2015

Other

OtherEPD Congress 2015 - TMS 2015 144th Annual Meeting and Exhibition
CountryUnited States
CityOrlando
Period3/15/153/19/15

Fingerprint

Chemical activation
Microwaves
Doping (additives)
activation
Heating
microwaves
heating
Annealing
annealing
profiles
Rapid thermal annealing
Crystallization
Ions
Heating furnaces
furnaces
Microwave ovens
Microwave heating
manufacturing
Aluminum Oxide
solar cells

Keywords

  • Annealing
  • Microwave
  • Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

Cite this

Gunawansa, T., Zhao, Z., Theodore, N. D., Lanz, A. R., & Alford, T. (2015). The extent of dopant activation after microwave and rapid thermal anneals using similar heating profiles. In TMS Annual Meeting (January ed., Vol. 2015-January, pp. 141-148). Minerals, Metals and Materials Society.

The extent of dopant activation after microwave and rapid thermal anneals using similar heating profiles. / Gunawansa, T.; Zhao, Zhao; Theodore, N. David; Lanz, A. R.; Alford, Terry.

TMS Annual Meeting. Vol. 2015-January January. ed. Minerals, Metals and Materials Society, 2015. p. 141-148.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gunawansa, T, Zhao, Z, Theodore, ND, Lanz, AR & Alford, T 2015, The extent of dopant activation after microwave and rapid thermal anneals using similar heating profiles. in TMS Annual Meeting. January edn, vol. 2015-January, Minerals, Metals and Materials Society, pp. 141-148, EPD Congress 2015 - TMS 2015 144th Annual Meeting and Exhibition, Orlando, United States, 3/15/15.
Gunawansa T, Zhao Z, Theodore ND, Lanz AR, Alford T. The extent of dopant activation after microwave and rapid thermal anneals using similar heating profiles. In TMS Annual Meeting. January ed. Vol. 2015-January. Minerals, Metals and Materials Society. 2015. p. 141-148
Gunawansa, T. ; Zhao, Zhao ; Theodore, N. David ; Lanz, A. R. ; Alford, Terry. / The extent of dopant activation after microwave and rapid thermal anneals using similar heating profiles. TMS Annual Meeting. Vol. 2015-January January. ed. Minerals, Metals and Materials Society, 2015. pp. 141-148
@inproceedings{7d6ee50daae74a00a9770bba83dd92b8,
title = "The extent of dopant activation after microwave and rapid thermal anneals using similar heating profiles",
abstract = "Many sustainability issues arise during the manufacturing processes that are currently used for solar cells. Solar energy is a renewable energy source that is independent of the earth's resources, and it is therefore important for the development of more sustainable technologies. Microwave annealing (MW) has been proposed as a technically feasible fabrication scheme for large area silicon solar cells. Apart from that, microwave annealing has been demonstrated to be a promising alternative for repairing damage and electrically activating dopants in ion-implanted semiconductors for integrated circuit manufacturing. A microwave oven is cheaper than conventional furnace systems. In addition, microwave heating is much more efficient than conventional furnace heating, as heating is directly produced inside the material. This minimizes the loss of energy due to heating of the ambient. There is a need for more efficient processing techniques. In this study, microwave annealing is used as an alternative to the current post- implantation processing. Arsenic-doped silicon was microwave annealed (with an alumina- coated silicon carbide susceptor) to activate dopant atoms and to repair damage that was caused by ion implantation. Sheet resistance and Hall effect measurements were used to assess the extent of dopant activation. Rutherford backscattering spectrometry (RBS) with ion channeling was conducted to determine the extent of recrystallization. The dopant activation and recrystallization resulting from microwave annealing is compared with that resulting from conventional rapid thermal annealing (RTA) with the same heating profile. The results show that when compared to RTA, susceptor-assisted microwave annealing results in better dopant activation for shorter anneal times under the same heating conditions.",
keywords = "Annealing, Microwave, Silicon",
author = "T. Gunawansa and Zhao Zhao and Theodore, {N. David} and Lanz, {A. R.} and Terry Alford",
year = "2015",
language = "English (US)",
volume = "2015-January",
pages = "141--148",
booktitle = "TMS Annual Meeting",
publisher = "Minerals, Metals and Materials Society",
edition = "January",

}

TY - GEN

T1 - The extent of dopant activation after microwave and rapid thermal anneals using similar heating profiles

AU - Gunawansa, T.

AU - Zhao, Zhao

AU - Theodore, N. David

AU - Lanz, A. R.

AU - Alford, Terry

PY - 2015

Y1 - 2015

N2 - Many sustainability issues arise during the manufacturing processes that are currently used for solar cells. Solar energy is a renewable energy source that is independent of the earth's resources, and it is therefore important for the development of more sustainable technologies. Microwave annealing (MW) has been proposed as a technically feasible fabrication scheme for large area silicon solar cells. Apart from that, microwave annealing has been demonstrated to be a promising alternative for repairing damage and electrically activating dopants in ion-implanted semiconductors for integrated circuit manufacturing. A microwave oven is cheaper than conventional furnace systems. In addition, microwave heating is much more efficient than conventional furnace heating, as heating is directly produced inside the material. This minimizes the loss of energy due to heating of the ambient. There is a need for more efficient processing techniques. In this study, microwave annealing is used as an alternative to the current post- implantation processing. Arsenic-doped silicon was microwave annealed (with an alumina- coated silicon carbide susceptor) to activate dopant atoms and to repair damage that was caused by ion implantation. Sheet resistance and Hall effect measurements were used to assess the extent of dopant activation. Rutherford backscattering spectrometry (RBS) with ion channeling was conducted to determine the extent of recrystallization. The dopant activation and recrystallization resulting from microwave annealing is compared with that resulting from conventional rapid thermal annealing (RTA) with the same heating profile. The results show that when compared to RTA, susceptor-assisted microwave annealing results in better dopant activation for shorter anneal times under the same heating conditions.

AB - Many sustainability issues arise during the manufacturing processes that are currently used for solar cells. Solar energy is a renewable energy source that is independent of the earth's resources, and it is therefore important for the development of more sustainable technologies. Microwave annealing (MW) has been proposed as a technically feasible fabrication scheme for large area silicon solar cells. Apart from that, microwave annealing has been demonstrated to be a promising alternative for repairing damage and electrically activating dopants in ion-implanted semiconductors for integrated circuit manufacturing. A microwave oven is cheaper than conventional furnace systems. In addition, microwave heating is much more efficient than conventional furnace heating, as heating is directly produced inside the material. This minimizes the loss of energy due to heating of the ambient. There is a need for more efficient processing techniques. In this study, microwave annealing is used as an alternative to the current post- implantation processing. Arsenic-doped silicon was microwave annealed (with an alumina- coated silicon carbide susceptor) to activate dopant atoms and to repair damage that was caused by ion implantation. Sheet resistance and Hall effect measurements were used to assess the extent of dopant activation. Rutherford backscattering spectrometry (RBS) with ion channeling was conducted to determine the extent of recrystallization. The dopant activation and recrystallization resulting from microwave annealing is compared with that resulting from conventional rapid thermal annealing (RTA) with the same heating profile. The results show that when compared to RTA, susceptor-assisted microwave annealing results in better dopant activation for shorter anneal times under the same heating conditions.

KW - Annealing

KW - Microwave

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=84937031700&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937031700&partnerID=8YFLogxK

M3 - Conference contribution

VL - 2015-January

SP - 141

EP - 148

BT - TMS Annual Meeting

PB - Minerals, Metals and Materials Society

ER -