The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

Physics & Astronomy

• proton irradiation 100%
• high electron mobility transistors 83%
• fluence 67%
• protons 53%
• transconductance 44%
• proton energy 43%
• energy dissipation 32%
• damage 28%
• saturation 28%
• annealing 24%
• energy 23%
• room temperature 22%

Engineering & Materials Science

• Protons 98%
• Proton irradiation 94%
• High electron mobility transistors 94%
• Degradation 56%
• Transconductance 32%
• Annealing 26%
• Energy dissipation 23%
• Temperature 10%