@article{10c7f43e89284da5920b3a561d22dd9b,
title = "The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors",
abstract = "The effects of proton irradiation at various energies are reported for AlGaN/GaN high electron mobility transistors (HEMTs). The devices exhibit little degradation when irradiated with 15-, 40-, and 105-MeV protons at fluences up to 1013 cm-2, and the damage completely recovers after annealing at room temperature. For 1.8-MeV proton irradiation, the drain saturation current decreases 10.6% and the maximum transconductance decreases 6.1% at a fluence of 1012 cm-2. The greater degradation measured at the lowest proton energy considered here is caused by the much larger nonionizing energy loss of the 1.8-MeV protons.",
keywords = "Displacement damage, GaN, High electron mobility transistors, Nonioizing energy loss (NIEL), Proton radiation effects",
author = "Xinwen Hu and Choi, {Bo K.} and Barnaby, {Hugh J.} and Fleetwood, {Daniel M.} and Schrimpf, {Ronald D.} and Sungchul Lee and S. Shojah-Ardalan and R. Wilkins and Mishra, {Umesh K.} and Dettmer, {Ross W.}",
note = "Funding Information: Manuscript received October 31, 2002; revised March 27, 2003. This work was supported by the United States Air Force Office of Scientific Research MURI Program. The work at PVAMU was supported by NASA through Contract NCC 9-114. This work was originally presented at the RADECS 2003 Workshop. X. Hu, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, and S. Lee are with the Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 USA (e-mail: xhu@spang.com). H. J. Barnaby is with the Electrical and Computer Engineering Department, University of Arizona, Tucson, AZ 85721 USA. S. Shojah-Ardalan and R. Wilkins are with the NASA Center for Applied Radiation Research, Prairie View A&M University, Prairie View, TX 77446 USA. U. K. Mishra is with the Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106 USA. R. W. Dettmer is with the Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH 45433 USA. Digital Object Identifier 10.1109/TNS.2004.825077",
year = "2004",
month = apr,
doi = "10.1109/TNS.2004.825077",
language = "English (US)",
volume = "51",
pages = "293--297",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}