The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

Xinwen Hu, Bo K. Choi, Hugh J. Barnaby, Daniel M. Fleetwood, Ronald D. Schrimpf, Sungchul Lee, S. Shojah-Ardalan, R. Wilkins, Umesh K. Mishra, Ross W. Dettmer

Research output: Contribution to journalArticle

88 Scopus citations

Abstract

The effects of proton irradiation at various energies are reported for AlGaN/GaN high electron mobility transistors (HEMTs). The devices exhibit little degradation when irradiated with 15-, 40-, and 105-MeV protons at fluences up to 1013 cm-2, and the damage completely recovers after annealing at room temperature. For 1.8-MeV proton irradiation, the drain saturation current decreases 10.6% and the maximum transconductance decreases 6.1% at a fluence of 1012 cm-2. The greater degradation measured at the lowest proton energy considered here is caused by the much larger nonionizing energy loss of the 1.8-MeV protons.

Original languageEnglish (US)
Pages (from-to)293-297
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume51
Issue number2
DOIs
StatePublished - Apr 1 2004
Externally publishedYes

Keywords

  • Displacement damage
  • GaN
  • High electron mobility transistors
  • Nonioizing energy loss (NIEL)
  • Proton radiation effects

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Hu, X., Choi, B. K., Barnaby, H. J., Fleetwood, D. M., Schrimpf, R. D., Lee, S., Shojah-Ardalan, S., Wilkins, R., Mishra, U. K., & Dettmer, R. W. (2004). The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors. IEEE Transactions on Nuclear Science, 51(2), 293-297. https://doi.org/10.1109/TNS.2004.825077