The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

Xinwen Hu, Bo K. Choi, Hugh Barnaby, Daniel M. Fleetwood, Ronald D. Schrimpf, Sungchul Lee, S. Shojah-Ardalan, R. Wilkins, Umesh K. Mishra, Ross W. Dettmer

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

The effects of proton irradiation at various energies are reported for AlGaN/GaN high electron mobility transistors (HEMTs). The devices exhibit little degradation when irradiated with 15-, 40-, and 105-MeV protons at fluences up to 1013 cm-2, and the damage completely recovers after annealing at room temperature. For 1.8-MeV proton irradiation, the drain saturation current decreases 10.6% and the maximum transconductance decreases 6.1% at a fluence of 1012 cm-2. The greater degradation measured at the lowest proton energy considered here is caused by the much larger nonionizing energy loss of the 1.8-MeV protons.

Original languageEnglish (US)
Pages (from-to)293-297
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume51
Issue number2
DOIs
StatePublished - Apr 2004
Externally publishedYes

Fingerprint

proton irradiation
High electron mobility transistors
high electron mobility transistors
Proton irradiation
Protons
fluence
degradation
Degradation
protons
transconductance
proton energy
energy dissipation
Transconductance
damage
saturation
annealing
energy
Energy dissipation
room temperature
Annealing

Keywords

  • Displacement damage
  • GaN
  • High electron mobility transistors
  • Nonioizing energy loss (NIEL)
  • Proton radiation effects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors. / Hu, Xinwen; Choi, Bo K.; Barnaby, Hugh; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Lee, Sungchul; Shojah-Ardalan, S.; Wilkins, R.; Mishra, Umesh K.; Dettmer, Ross W.

In: IEEE Transactions on Nuclear Science, Vol. 51, No. 2, 04.2004, p. 293-297.

Research output: Contribution to journalArticle

Hu, X, Choi, BK, Barnaby, H, Fleetwood, DM, Schrimpf, RD, Lee, S, Shojah-Ardalan, S, Wilkins, R, Mishra, UK & Dettmer, RW 2004, 'The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors', IEEE Transactions on Nuclear Science, vol. 51, no. 2, pp. 293-297. https://doi.org/10.1109/TNS.2004.825077
Hu, Xinwen ; Choi, Bo K. ; Barnaby, Hugh ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Lee, Sungchul ; Shojah-Ardalan, S. ; Wilkins, R. ; Mishra, Umesh K. ; Dettmer, Ross W. / The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors. In: IEEE Transactions on Nuclear Science. 2004 ; Vol. 51, No. 2. pp. 293-297.
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