@inproceedings{2cb42b57a71142ea89541e35570b5088,
title = "The electronic nature of metal/p-GaN junctions",
abstract = "We have studied the microscopic electronic characteristics of Ni-Au layers on Mg-doped GaN, using electron beam induced current to measure the carrier separation associated with built-in electric fields. Scanning electron microscopy reveals that the metal layer has a large density of Ni islands within a Au matrix. An enhancement in the charge collection current is observed at these islands, in comparison with the matrix. These observations are explained by a local reduction in the Schottky barrier at the Ni islands.",
author = "S. Srinivasan and H. Omiya and Fernando Ponce and S. Tanaka and H. Marui and T. Mukai",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994099",
language = "English (US)",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "279--280",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}