The electronic nature of metal/p-GaN junctions

S. Srinivasan, H. Omiya, Fernando Ponce, S. Tanaka, H. Marui, T. Mukai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied the microscopic electronic characteristics of Ni-Au layers on Mg-doped GaN, using electron beam induced current to measure the carrier separation associated with built-in electric fields. Scanning electron microscopy reveals that the metal layer has a large density of Ni islands within a Au matrix. An enhancement in the charge collection current is observed at these islands, in comparison with the matrix. These observations are explained by a local reduction in the Schottky barrier at the Ni islands.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages279-280
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Srinivasan, S., Omiya, H., Ponce, F., Tanaka, S., Marui, H., & Mukai, T. (2005). The electronic nature of metal/p-GaN junctions. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 279-280). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994099