The electron-phonon relaxation time in thin superconducting titanium nitride films

A. Kardakova, M. Finkel, D. Morozov, V. Kovalyuk, P. An, C. Dunscombe, M. Tarkhov, P. Mauskopf, T. M. Klapwijk, G. Goltsman

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Abstract

We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

Original languageEnglish (US)
Article number252602
JournalApplied Physics Letters
Volume103
Issue number25
DOIs
StatePublished - Dec 16 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kardakova, A., Finkel, M., Morozov, D., Kovalyuk, V., An, P., Dunscombe, C., Tarkhov, M., Mauskopf, P., Klapwijk, T. M., & Goltsman, G. (2013). The electron-phonon relaxation time in thin superconducting titanium nitride films. Applied Physics Letters, 103(25), [252602]. https://doi.org/10.1063/1.4851235