The electron-phonon relaxation time in thin superconducting titanium nitride films

A. Kardakova, M. Finkel, D. Morozov, V. Kovalyuk, P. An, C. Dunscombe, M. Tarkhov, Philip Mauskopf, T. M. Klapwijk, G. Goltsman

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

Original languageEnglish (US)
Article number252602
JournalApplied Physics Letters
Volume103
Issue number25
DOIs
StatePublished - Dec 16 2013
Externally publishedYes

Fingerprint

titanium nitrides
relaxation time
temperature dependence
detectors
thin films
electronics
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kardakova, A., Finkel, M., Morozov, D., Kovalyuk, V., An, P., Dunscombe, C., ... Goltsman, G. (2013). The electron-phonon relaxation time in thin superconducting titanium nitride films. Applied Physics Letters, 103(25), [252602]. https://doi.org/10.1063/1.4851235

The electron-phonon relaxation time in thin superconducting titanium nitride films. / Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, Philip; Klapwijk, T. M.; Goltsman, G.

In: Applied Physics Letters, Vol. 103, No. 25, 252602, 16.12.2013.

Research output: Contribution to journalArticle

Kardakova, A, Finkel, M, Morozov, D, Kovalyuk, V, An, P, Dunscombe, C, Tarkhov, M, Mauskopf, P, Klapwijk, TM & Goltsman, G 2013, 'The electron-phonon relaxation time in thin superconducting titanium nitride films', Applied Physics Letters, vol. 103, no. 25, 252602. https://doi.org/10.1063/1.4851235
Kardakova A, Finkel M, Morozov D, Kovalyuk V, An P, Dunscombe C et al. The electron-phonon relaxation time in thin superconducting titanium nitride films. Applied Physics Letters. 2013 Dec 16;103(25). 252602. https://doi.org/10.1063/1.4851235
Kardakova, A. ; Finkel, M. ; Morozov, D. ; Kovalyuk, V. ; An, P. ; Dunscombe, C. ; Tarkhov, M. ; Mauskopf, Philip ; Klapwijk, T. M. ; Goltsman, G. / The electron-phonon relaxation time in thin superconducting titanium nitride films. In: Applied Physics Letters. 2013 ; Vol. 103, No. 25.
@article{7b202e369c914ca2ba2cd261f974a80c,
title = "The electron-phonon relaxation time in thin superconducting titanium nitride films",
abstract = "We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.",
author = "A. Kardakova and M. Finkel and D. Morozov and V. Kovalyuk and P. An and C. Dunscombe and M. Tarkhov and Philip Mauskopf and Klapwijk, {T. M.} and G. Goltsman",
year = "2013",
month = "12",
day = "16",
doi = "10.1063/1.4851235",
language = "English (US)",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - The electron-phonon relaxation time in thin superconducting titanium nitride films

AU - Kardakova, A.

AU - Finkel, M.

AU - Morozov, D.

AU - Kovalyuk, V.

AU - An, P.

AU - Dunscombe, C.

AU - Tarkhov, M.

AU - Mauskopf, Philip

AU - Klapwijk, T. M.

AU - Goltsman, G.

PY - 2013/12/16

Y1 - 2013/12/16

N2 - We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

AB - We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

UR - http://www.scopus.com/inward/record.url?scp=84891417742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891417742&partnerID=8YFLogxK

U2 - 10.1063/1.4851235

DO - 10.1063/1.4851235

M3 - Article

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 252602

ER -