The effects of radiation-induced interface traps on base current in gated bipolar test structures

X. J. Chen; Hugh Barnaby

doi:10.1016/j.sse.2007.10.047

The effects of radiation-induced interface traps on base current in gated bipolar test structures

X. J. Chen, Hugh Barnaby

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Ionizing radiation experiments on gated bipolar transistors used as radiation test structures show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of radiation-induced interface traps in the oxide over the base. From theoretical analysis using Shockley-Reed-Hall (SRH) statistics, a mathematical formulation of effective Fermi level, E_f,eff is derived to describe the charge state of interface traps in a gated bipolar transistor under forward bipolar operation as the surface of the transistor is changed from accumulation to inversion by biasing on the gate terminal.

Original language	English (US)
Pages (from-to)	683-687
Number of pages	5
Journal	Solid-State Electronics
Volume	52
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2007.10.047
State	Published - May 2008

Keywords

Bipolar junction transistors
Fermi level
Interface traps
Ionizing radiation
Surface recombination velocity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2007.10.047

Fingerprint Dive into the research topics of 'The effects of radiation-induced interface traps on base current in gated bipolar test structures'. Together they form a unique fingerprint.

Cite this

@article{1dff038f4e214aebac2f9aebc4674317,

title = "The effects of radiation-induced interface traps on base current in gated bipolar test structures",

abstract = "Ionizing radiation experiments on gated bipolar transistors used as radiation test structures show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of radiation-induced interface traps in the oxide over the base. From theoretical analysis using Shockley-Reed-Hall (SRH) statistics, a mathematical formulation of effective Fermi level, Ef,eff is derived to describe the charge state of interface traps in a gated bipolar transistor under forward bipolar operation as the surface of the transistor is changed from accumulation to inversion by biasing on the gate terminal.",

keywords = "Bipolar junction transistors, Fermi level, Interface traps, Ionizing radiation, Surface recombination velocity",

author = "Chen, {X. J.} and Hugh Barnaby",

year = "2008",

month = may,

doi = "10.1016/j.sse.2007.10.047",

language = "English (US)",

volume = "52",

pages = "683--687",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "5",

}

TY - JOUR

T1 - The effects of radiation-induced interface traps on base current in gated bipolar test structures

AU - Chen, X. J.

AU - Barnaby, Hugh

PY - 2008/5

Y1 - 2008/5

N2 - Ionizing radiation experiments on gated bipolar transistors used as radiation test structures show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of radiation-induced interface traps in the oxide over the base. From theoretical analysis using Shockley-Reed-Hall (SRH) statistics, a mathematical formulation of effective Fermi level, Ef,eff is derived to describe the charge state of interface traps in a gated bipolar transistor under forward bipolar operation as the surface of the transistor is changed from accumulation to inversion by biasing on the gate terminal.

AB - Ionizing radiation experiments on gated bipolar transistors used as radiation test structures show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of radiation-induced interface traps in the oxide over the base. From theoretical analysis using Shockley-Reed-Hall (SRH) statistics, a mathematical formulation of effective Fermi level, Ef,eff is derived to describe the charge state of interface traps in a gated bipolar transistor under forward bipolar operation as the surface of the transistor is changed from accumulation to inversion by biasing on the gate terminal.

KW - Bipolar junction transistors

KW - Fermi level

KW - Interface traps

KW - Ionizing radiation

KW - Surface recombination velocity

UR - http://www.scopus.com/inward/record.url?scp=41449087977&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41449087977&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.10.047

DO - 10.1016/j.sse.2007.10.047

M3 - Article

AN - SCOPUS:41449087977

VL - 52

SP - 683

EP - 687

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 5

ER -

The effects of radiation-induced interface traps on base current in gated bipolar test structures

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this