Abstract
Ionizing radiation experiments on gated bipolar transistors used as radiation test structures show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of radiation-induced interface traps in the oxide over the base. From theoretical analysis using Shockley-Reed-Hall (SRH) statistics, a mathematical formulation of effective Fermi level, Ef,eff is derived to describe the charge state of interface traps in a gated bipolar transistor under forward bipolar operation as the surface of the transistor is changed from accumulation to inversion by biasing on the gate terminal.
Original language | English (US) |
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Pages (from-to) | 683-687 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 52 |
Issue number | 5 |
DOIs | |
State | Published - May 2008 |
Keywords
- Bipolar junction transistors
- Fermi level
- Interface traps
- Ionizing radiation
- Surface recombination velocity
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry