The effects of radiation-induced interface traps on base current in gated bipolar test structures

X. J. Chen, Hugh Barnaby

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Ionizing radiation experiments on gated bipolar transistors used as radiation test structures show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of radiation-induced interface traps in the oxide over the base. From theoretical analysis using Shockley-Reed-Hall (SRH) statistics, a mathematical formulation of effective Fermi level, Ef,eff is derived to describe the charge state of interface traps in a gated bipolar transistor under forward bipolar operation as the surface of the transistor is changed from accumulation to inversion by biasing on the gate terminal.

Original languageEnglish (US)
Pages (from-to)683-687
Number of pages5
JournalSolid-State Electronics
Volume52
Issue number5
DOIs
StatePublished - May 2008

Keywords

  • Bipolar junction transistors
  • Fermi level
  • Interface traps
  • Ionizing radiation
  • Surface recombination velocity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'The effects of radiation-induced interface traps on base current in gated bipolar test structures'. Together they form a unique fingerprint.

Cite this