Abstract
Device characteristics, calculated using a new model, of MOSFET’s with nonuniform gate thicknesses are presented in this brief. The results show that nonuniform structures have some advantages over traditional uniform MOSFET’s. Tapered-gate MOSFET’s have higher output differential saturation resistance and lower electric field near the drain end than uniform MOSFET’s.
Original language | English (US) |
---|---|
Pages (from-to) | 1395-1397 |
Number of pages | 3 |
Journal | IEEE Transactions on Electron Devices |
Volume | 35 |
Issue number | 8 |
DOIs | |
State | Published - Aug 1988 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering