The Effects of Nonuniform Oxide Thickness on MOSFET Performance

Q. Z. Zhang, Michael Kozicki, D. K. Schroder

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Device characteristics, calculated using a new model, of MOSFET’s with nonuniform gate thicknesses are presented in this brief. The results show that nonuniform structures have some advantages over traditional uniform MOSFET’s. Tapered-gate MOSFET’s have higher output differential saturation resistance and lower electric field near the drain end than uniform MOSFET’s.

Original languageEnglish (US)
Pages (from-to)1395-1397
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume35
Issue number8
DOIs
StatePublished - Aug 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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