Device characteristics, calculated using a new model, of MOSFET’s with nonuniform gate thicknesses are presented in this brief. The results show that nonuniform structures have some advantages over traditional uniform MOSFET’s. Tapered-gate MOSFET’s have higher output differential saturation resistance and lower electric field near the drain end than uniform MOSFET’s.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering