The Effects of Nonuniform Oxide Thickness on MOSFET Performance

Q. Z. Zhang; Michael Kozicki; D. K. Schroder

doi:10.1109/16.2569

The Effects of Nonuniform Oxide Thickness on MOSFET Performance

Q. Z. Zhang, Michael Kozicki, D. K. Schroder

IAFSE-ECEE: Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Device characteristics, calculated using a new model, of MOSFET’s with nonuniform gate thicknesses are presented in this brief. The results show that nonuniform structures have some advantages over traditional uniform MOSFET’s. Tapered-gate MOSFET’s have higher output differential saturation resistance and lower electric field near the drain end than uniform MOSFET’s.

Original language	English (US)
Pages (from-to)	1395-1397
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	35
Issue number	8
DOIs	https://doi.org/10.1109/16.2569
State	Published - Aug 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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AB - Device characteristics, calculated using a new model, of MOSFET’s with nonuniform gate thicknesses are presented in this brief. The results show that nonuniform structures have some advantages over traditional uniform MOSFET’s. Tapered-gate MOSFET’s have higher output differential saturation resistance and lower electric field near the drain end than uniform MOSFET’s.

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The Effects of Nonuniform Oxide Thickness on MOSFET Performance

Abstract

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