The effects of hydrogen on the enhanced Low Dose Rate Sensitivity (ELDRS) of bipolar linear circuits

Ronald L. Pease, Philippe Claude Adell, Bernard G. Rax, Xiao Jie Chen, Hugh Barnaby, Keith Holbert, Harold P. Hjalmarson

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar linear circuits. These experiments show that the amount of hydrogen determines the total dose response versus dose rate, both the saturation at low dose rate and the transition dose rate between the high and low dose rate responses. The experimental results are supported with modeling calculations using REOS (Radiation Effects in Oxides and Semiconductors).

Original languageEnglish (US)
Article number4723793
Pages (from-to)3169-3173
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume55
Issue number6
DOIs
StatePublished - Dec 2008

Keywords

  • Dose rate
  • Enhanced low-dose rate sensitivity
  • Hydrogen
  • Interface traps
  • Radiation effects
  • Total ionizing dose
  • Voltage comparator

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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