The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits

Ronald L. Pease, Dale G. Platteter, Gary W. Dunham, John E. Seiler, Philippe C. Adell, Hugh Barnaby, Jie Chen

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100% molecular hydrogen dies with silicon nitride passivation are unaffected, whereas dies with silicon carbide or deposited oxides become very soft at high and low dose rate.

Original languageEnglish (US)
Pages (from-to)2168-2173
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume54
Issue number6
DOIs
StatePublished - Dec 1 2007

Keywords

  • Dose rate
  • Enhanced low-dose-rate sensitivity
  • Hydrogen
  • Interface traps
  • Radiation effects
  • Temperature transducer
  • Total ionizing dose
  • Voltage comparator

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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