The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors

D. R. Hughart, Ronald D. Schrimpf, Daniel M. Fleetwood, X. Jie Chen, Hugh Barnaby, Keith Holbert, Ronald L. Pease, Dale G. Platteter, Blair R. Tuttle, Sokrates T. Pantelides

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Complex interplay between hydrogen-related defect formation and passivation is observed in irradiated bipolar transistors. Hydrogen soaking experiments are performed to evaluate the dependence of defect buildup and annealing in gated lateral bipolar transistors on hydrogen exposure. Comparisons of the radiation responses of transistors tested in 2009 to identical devices from the same wafer tested in 2003 show that aging has reduced the amount of radiatION-induced interface trap and oxide trapped charge formation in most cases. These results demonstrate that the way in which the radiation response of a hydrogen-sensitive device evolves with age depends on whether hydrogen is diffusing into or out of the device, and whether the initial defect concentration favors passivation or depassivation reactions. These results strongly suggest that hydrogen exposure cannot replace low-dose-rate irradiation in ELDRS tests for bipolar devices and ICs without extensive characterization testing.

Original languageEnglish (US)
Article number5341350
Pages (from-to)3361-3366
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume56
Issue number6
DOIs
StatePublished - Dec 2009

Fingerprint

Bipolar transistors
bipolar transistors
Aging of materials
Radiation
Hydrogen
hydrogen
radiation
Passivation
Defects
passivity
defects
soaking
Dosimetry
Transistors
transistors
traps
Irradiation
wafers
Annealing
dosage

Keywords

  • Aging
  • Annealing
  • Gated lateral bipolar transistor
  • Hardness assurance
  • Hydrogen
  • Interface traps
  • Oxide trapped charge
  • Radiation effects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors. / Hughart, D. R.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Chen, X. Jie; Barnaby, Hugh; Holbert, Keith; Pease, Ronald L.; Platteter, Dale G.; Tuttle, Blair R.; Pantelides, Sokrates T.

In: IEEE Transactions on Nuclear Science, Vol. 56, No. 6, 5341350, 12.2009, p. 3361-3366.

Research output: Contribution to journalArticle

Hughart, DR, Schrimpf, RD, Fleetwood, DM, Chen, XJ, Barnaby, H, Holbert, K, Pease, RL, Platteter, DG, Tuttle, BR & Pantelides, ST 2009, 'The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors', IEEE Transactions on Nuclear Science, vol. 56, no. 6, 5341350, pp. 3361-3366. https://doi.org/10.1109/TNS.2009.2034151
Hughart, D. R. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Chen, X. Jie ; Barnaby, Hugh ; Holbert, Keith ; Pease, Ronald L. ; Platteter, Dale G. ; Tuttle, Blair R. ; Pantelides, Sokrates T. / The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors. In: IEEE Transactions on Nuclear Science. 2009 ; Vol. 56, No. 6. pp. 3361-3366.
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