The effect of surface roughness on the performance of InP MOSFETs

Oetomo Sri; R. E. Owens; C. W. Wilmsen; Stephen Goodnick; J. E. Lary

The effect of surface roughness on the performance of InP MOSFETs

Oetomo Sri, R. E. Owens, C. W. Wilmsen, Stephen Goodnick, J. E. Lary

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Results of a Monte Carlo simulation of inversion layer transport in InP devices at both high and low fields are presented. They show that the low-field mobility and the peak electron velocity decrease with increasing surface roughness and interface charge. However, at high fields the average electron velocity for the different surfaces converge and become nearly independent of the surface condition. This suggests that as the MOSFET is scaled down, the device performance will become independent of interface quality. Velocity-field, transit-time-channel-length, and transit-time-surface-roughness curves for InP MIS structures are presented. From these, qualitative estimates of device performance are obtained in terms of the surface roughness.

Original language	English (US)
Title of host publication	Second International Conference on Indium Phosphide and Related Materials
Place of Publication	Piscataway, NJ, United States
Publisher	Publ by IEEE
Pages	320-324
Number of pages	5
State	Published - 1990
Externally published	Yes
Event	Second International Conference on Indium Phosphide and Related Materials - Denver, CO, USA Duration: Apr 23 1990 → Apr 25 1990

Other

Other	Second International Conference on Indium Phosphide and Related Materials
City	Denver, CO, USA
Period	4/23/90 → 4/25/90

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{36176580a8934bb280f6756813706b40,

title = "The effect of surface roughness on the performance of InP MOSFETs",

abstract = "Results of a Monte Carlo simulation of inversion layer transport in InP devices at both high and low fields are presented. They show that the low-field mobility and the peak electron velocity decrease with increasing surface roughness and interface charge. However, at high fields the average electron velocity for the different surfaces converge and become nearly independent of the surface condition. This suggests that as the MOSFET is scaled down, the device performance will become independent of interface quality. Velocity-field, transit-time-channel-length, and transit-time-surface-roughness curves for InP MIS structures are presented. From these, qualitative estimates of device performance are obtained in terms of the surface roughness.",

author = "Oetomo Sri and Owens, {R. E.} and Wilmsen, {C. W.} and Stephen Goodnick and Lary, {J. E.}",

year = "1990",

language = "English (US)",

pages = "320--324",

booktitle = "Second International Conference on Indium Phosphide and Related Materials",

publisher = "Publ by IEEE",

note = "Second International Conference on Indium Phosphide and Related Materials ; Conference date: 23-04-1990 Through 25-04-1990",

}

TY - GEN

T1 - The effect of surface roughness on the performance of InP MOSFETs

AU - Sri, Oetomo

AU - Owens, R. E.

AU - Wilmsen, C. W.

AU - Goodnick, Stephen

AU - Lary, J. E.

PY - 1990

Y1 - 1990

N2 - Results of a Monte Carlo simulation of inversion layer transport in InP devices at both high and low fields are presented. They show that the low-field mobility and the peak electron velocity decrease with increasing surface roughness and interface charge. However, at high fields the average electron velocity for the different surfaces converge and become nearly independent of the surface condition. This suggests that as the MOSFET is scaled down, the device performance will become independent of interface quality. Velocity-field, transit-time-channel-length, and transit-time-surface-roughness curves for InP MIS structures are presented. From these, qualitative estimates of device performance are obtained in terms of the surface roughness.

AB - Results of a Monte Carlo simulation of inversion layer transport in InP devices at both high and low fields are presented. They show that the low-field mobility and the peak electron velocity decrease with increasing surface roughness and interface charge. However, at high fields the average electron velocity for the different surfaces converge and become nearly independent of the surface condition. This suggests that as the MOSFET is scaled down, the device performance will become independent of interface quality. Velocity-field, transit-time-channel-length, and transit-time-surface-roughness curves for InP MIS structures are presented. From these, qualitative estimates of device performance are obtained in terms of the surface roughness.

UR - http://www.scopus.com/inward/record.url?scp=0025566411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025566411&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025566411

SP - 320

EP - 324

BT - Second International Conference on Indium Phosphide and Related Materials

PB - Publ by IEEE

CY - Piscataway, NJ, United States

T2 - Second International Conference on Indium Phosphide and Related Materials

Y2 - 23 April 1990 through 25 April 1990

ER -

The effect of surface roughness on the performance of InP MOSFETs

Abstract

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ASJC Scopus subject areas

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