The effect of surface roughness on the performance of InP MOSFETs

Oetomo Sri, R. E. Owens, C. W. Wilmsen, Stephen Goodnick, J. E. Lary

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Results of a Monte Carlo simulation of inversion layer transport in InP devices at both high and low fields are presented. They show that the low-field mobility and the peak electron velocity decrease with increasing surface roughness and interface charge. However, at high fields the average electron velocity for the different surfaces converge and become nearly independent of the surface condition. This suggests that as the MOSFET is scaled down, the device performance will become independent of interface quality. Velocity-field, transit-time-channel-length, and transit-time-surface-roughness curves for InP MIS structures are presented. From these, qualitative estimates of device performance are obtained in terms of the surface roughness.

Original languageEnglish (US)
Title of host publicationSecond International Conference on Indium Phosphide and Related Materials
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages320-324
Number of pages5
Publication statusPublished - 1990
Externally publishedYes
EventSecond International Conference on Indium Phosphide and Related Materials - Denver, CO, USA
Duration: Apr 23 1990Apr 25 1990

Other

OtherSecond International Conference on Indium Phosphide and Related Materials
CityDenver, CO, USA
Period4/23/904/25/90

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sri, O., Owens, R. E., Wilmsen, C. W., Goodnick, S., & Lary, J. E. (1990). The effect of surface roughness on the performance of InP MOSFETs. In Second International Conference on Indium Phosphide and Related Materials (pp. 320-324). Piscataway, NJ, United States: Publ by IEEE.