The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors

J. M. Benedetto, R. A. Moore, F. B. McLean, P. S. Brody, Sandwip Dey

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

Ferroelectric (FE) thin-film capacitors were irradiated to 100 Mrad(Si) with 10-keV x rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion is dependent upon the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-Khz square wave. The amount of damage removed is dependent upon the radiation conditions.

Original languageEnglish (US)
Pages (from-to)1713-1717
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume37
Issue number6
DOIs
StatePublished - 1990

Fingerprint

Ionizing radiation
ionizing radiation
Ferroelectric materials
Sol-gels
capacitors
Capacitors
gels
damage
Radiation
Ferroelectric thin films
square waves
radiation
Hysteresis loops
hysteresis
Irradiation
Polarization
X rays
cycles
irradiation
polarization

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering
  • Nuclear and High Energy Physics

Cite this

The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors. / Benedetto, J. M.; Moore, R. A.; McLean, F. B.; Brody, P. S.; Dey, Sandwip.

In: IEEE Transactions on Nuclear Science, Vol. 37, No. 6, 1990, p. 1713-1717.

Research output: Contribution to journalArticle

Benedetto, J. M. ; Moore, R. A. ; McLean, F. B. ; Brody, P. S. ; Dey, Sandwip. / The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors. In: IEEE Transactions on Nuclear Science. 1990 ; Vol. 37, No. 6. pp. 1713-1717.
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