The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors

J. M. Benedetto; R. A. Moore; F. B. McLean; P. S. Brody; Sandwip Dey

doi:10.1109/23.101181

The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors

J. M. Benedetto, R. A. Moore, F. B. McLean, P. S. Brody, Sandwip Dey

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

Ferroelectric (FE) thin-film capacitors were irradiated to 100 Mrad(Si) with 10-keV x rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion is dependent upon the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-Khz square wave. The amount of damage removed is dependent upon the radiation conditions.

Original language	English (US)
Pages (from-to)	1713-1717
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	37
Issue number	6
DOIs	https://doi.org/10.1109/23.101181
State	Published - Dec 1990

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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abstract = "Ferroelectric (FE) thin-film capacitors were irradiated to 100 Mrad(Si) with 10-keV x rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion is dependent upon the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-Khz square wave. The amount of damage removed is dependent upon the radiation conditions.",

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note = "Funding Information: 'This work was partially supported by Defense Nuclear Agency.",

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AU - McLean, F. B.

AU - Brody, P. S.

AU - Dey, Sandwip

N1 - Funding Information: 'This work was partially supported by Defense Nuclear Agency.

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Y1 - 1990/12

N2 - Ferroelectric (FE) thin-film capacitors were irradiated to 100 Mrad(Si) with 10-keV x rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion is dependent upon the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-Khz square wave. The amount of damage removed is dependent upon the radiation conditions.

AB - Ferroelectric (FE) thin-film capacitors were irradiated to 100 Mrad(Si) with 10-keV x rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion is dependent upon the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-Khz square wave. The amount of damage removed is dependent upon the radiation conditions.

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The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors

Abstract

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