The Effect of Carrier Concentration on Microwave Emission from n-Type Indium Antimonide

W. A. Porter, D. K. Ferry

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of carrier concentration on the threshold for microwave emission from InSb was determined. Threshold electric fields are lower for higher concentrations and the magnetic field dependence is reduced.

Original languageEnglish (US)
Pages (from-to)1517-1518
Number of pages2
JournalZeitschrift fur Naturforschung - Section A Journal of Physical Sciences
Volume25
Issue number10
DOIs
StatePublished - Oct 1 1970
Externally publishedYes

Fingerprint

microwave emission
Indium
Microwave
Carrier concentration
indium
Microwaves
Electric fields
Magnetic fields
thresholds
Electric Field
Magnetic Field
electric fields
magnetic fields

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Mathematical Physics
  • Physics and Astronomy(all)

Cite this

The Effect of Carrier Concentration on Microwave Emission from n-Type Indium Antimonide. / Porter, W. A.; Ferry, D. K.

In: Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences, Vol. 25, No. 10, 01.10.1970, p. 1517-1518.

Research output: Contribution to journalArticle

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