The effect of aluminum and boron solid-source doping on recombination in silicon solar cells

Richard R. King, Edward W. Thomas, W. B. Carter, Ajeet Rohatgi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

The recombination properties of p-type diffusions formed by aluminum diffused into the silicon from an evaporated layer and boron diffused from a B2O3 layer deposited on the silicon from solid doping sources is investigated. The contactless photoconductivity decay method was used to separate the emitter saturation current density Jo of the diffusions themselves from the effect of the diffusion process on the bulk lifetime in the substrate. Al diffusions were found to have very high values of Jo, ranging from approximately 66 × 10-13 A/cm2 at a diffusion temperature of 850°C, to approximately 20 × 10-13 A/cm2 at 1100°C. However, the detrimental effect of these high Jo values on cell efficiency can be managed by reducing the coverage fraction of the diffusions. Bulk lifetimes remained high at approximately 2000 μs after Al diffusion at temperatures from 850°C to 1100°C.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherPubl by IEEE
Pages229-234
Number of pages6
ISBN (Print)0879426365
StatePublished - Jan 1 1992
Externally publishedYes
EventThe Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA
Duration: Oct 7 1991Oct 11 1991

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume1
ISSN (Print)0160-8371

Other

OtherThe Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991
CityLas Vegas, NV, USA
Period10/7/9110/11/91

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    King, R. R., Thomas, E. W., Carter, W. B., & Rohatgi, A. (1992). The effect of aluminum and boron solid-source doping on recombination in silicon solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 229-234). (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 1). Publ by IEEE.