The dependence of low-temperature ion mixing of Y/Si bilayers on nuclear energy deposition

Terry Alford, P. Børgesen, D. A. Lilienfeld

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Bilayers of yttrium and amorphous silicon were irradiated with 600-keV Ar++, Kr++, and Xe++ ions at temperatures between 80 and 372 K. The mixing rates were considerably larger than rates predicted by a model based on overlapping thermal spikes, as well as predictions generated by an extension of the model to the case of nonoverlapping thermal spikes. However, the experimental mixing rates did exhibit a linear dependence on the nuclear energy deposited at the interface. This agrees qualitatively with the premise of nonoverlapping thermal spikes. We compare our results with other ion-mixed medium-Z, metal/metal systems which also show this tendency.

Original languageEnglish (US)
Pages (from-to)7528-7532
Number of pages5
JournalJournal of Applied Physics
Volume69
Issue number11
DOIs
StatePublished - 1991
Externally publishedYes

Fingerprint

nuclear energy
spikes
ions
yttrium
metals
amorphous silicon
tendencies
silicon
predictions
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

The dependence of low-temperature ion mixing of Y/Si bilayers on nuclear energy deposition. / Alford, Terry; Børgesen, P.; Lilienfeld, D. A.

In: Journal of Applied Physics, Vol. 69, No. 11, 1991, p. 7528-7532.

Research output: Contribution to journalArticle

@article{aec33ccfb0fa485b875f0122d4f84f27,
title = "The dependence of low-temperature ion mixing of Y/Si bilayers on nuclear energy deposition",
abstract = "Bilayers of yttrium and amorphous silicon were irradiated with 600-keV Ar++, Kr++, and Xe++ ions at temperatures between 80 and 372 K. The mixing rates were considerably larger than rates predicted by a model based on overlapping thermal spikes, as well as predictions generated by an extension of the model to the case of nonoverlapping thermal spikes. However, the experimental mixing rates did exhibit a linear dependence on the nuclear energy deposited at the interface. This agrees qualitatively with the premise of nonoverlapping thermal spikes. We compare our results with other ion-mixed medium-Z, metal/metal systems which also show this tendency.",
author = "Terry Alford and P. B{\o}rgesen and Lilienfeld, {D. A.}",
year = "1991",
doi = "10.1063/1.348929",
language = "English (US)",
volume = "69",
pages = "7528--7532",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - The dependence of low-temperature ion mixing of Y/Si bilayers on nuclear energy deposition

AU - Alford, Terry

AU - Børgesen, P.

AU - Lilienfeld, D. A.

PY - 1991

Y1 - 1991

N2 - Bilayers of yttrium and amorphous silicon were irradiated with 600-keV Ar++, Kr++, and Xe++ ions at temperatures between 80 and 372 K. The mixing rates were considerably larger than rates predicted by a model based on overlapping thermal spikes, as well as predictions generated by an extension of the model to the case of nonoverlapping thermal spikes. However, the experimental mixing rates did exhibit a linear dependence on the nuclear energy deposited at the interface. This agrees qualitatively with the premise of nonoverlapping thermal spikes. We compare our results with other ion-mixed medium-Z, metal/metal systems which also show this tendency.

AB - Bilayers of yttrium and amorphous silicon were irradiated with 600-keV Ar++, Kr++, and Xe++ ions at temperatures between 80 and 372 K. The mixing rates were considerably larger than rates predicted by a model based on overlapping thermal spikes, as well as predictions generated by an extension of the model to the case of nonoverlapping thermal spikes. However, the experimental mixing rates did exhibit a linear dependence on the nuclear energy deposited at the interface. This agrees qualitatively with the premise of nonoverlapping thermal spikes. We compare our results with other ion-mixed medium-Z, metal/metal systems which also show this tendency.

UR - http://www.scopus.com/inward/record.url?scp=36449003259&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449003259&partnerID=8YFLogxK

U2 - 10.1063/1.348929

DO - 10.1063/1.348929

M3 - Article

AN - SCOPUS:36449003259

VL - 69

SP - 7528

EP - 7532

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -